Capacitive diode assembly and method of manufacturing the same
A technology of capacitive diodes and diodes, applied in the field of microelectronics, can solve problems such as high transient power, difficult to achieve TVS devices, parasitic effects, and poor heat dissipation, so as to improve applicability, reduce production costs, and facilitate industrialization Effect
Active Publication Date: 2018-05-11
BEIJING YANDONG MICROELECTRONICS
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Problems solved by technology
However, due to parasitic effects and poor heat dissipation, it is difficult for this TVS device to achieve high transient power
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[0035] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown.
[0036]It should be understood that when describing a structure, when a layer or an area is referred to as being "on" or "over" another layer or another area, it may mean that it is directly on another layer or another area, or Other layers or regions are also included between it and another layer or another region. And, if the structure is turned over, the layer, one region, would be "under" or "beneath" the other layer, another region. If it is to describe the situation directly on another layer or another area, the expression "A is directly above B" or "A is above and adjacent to B" will be used herein.
[0037] In addition, when desc...
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Capacitive diode assemblies and methods of making the same are disclosed. The capacitive diode assembly includes: a semiconductor substrate of the first conductivity type; an epitaxial layer of the second conductivity type located on the semiconductor substrate, the second conductivity type being different from the first conductivity type; an isolation region of the first conductivity type, extending from the surface of the epitaxial layer through the epitaxial layer into the semiconductor substrate, thereby defining a first active region of the first diode and a second active region of the second diode in the epitaxial layer, and incorporating the first The active region and the second active region are separated from each other; the first doped region of the first conductivity type extends from the surface of the epitaxial layer into the epitaxial layer in the first active region; the second doped region of the second conductivity type , extending from the surface of the epitaxial layer into the epitaxial layer in the second active region; and an interconnection structure electrically connecting the isolation region and the part of the epitaxial layer located in the first active region to each other. The capacitive diode component can be used as a non-polar capacitive element, which can improve the transient response speed of the transient voltage suppressor.
Description
technical field [0001] The invention relates to the technical field of microelectronics, and more particularly, to a capacitive diode component and a manufacturing method thereof. Background technique [0002] Transient Voltage Suppressor TVS (Transient Voltage Suppressor) is a high-efficiency circuit protection device developed on the basis of voltage regulator tubes. The shape of TVS diodes is the same as that of ordinary Zener tubes. However, due to the special structure and process design, the transient response speed and surge absorption capacity of TVS diodes are much higher than ordinary Zener tubes. For example, TVS diodes have a response time of only 10 -12 seconds, and can absorb surge power up to several thousand watts. Under reverse application conditions, when subjected to a high-energy large pulse, the working impedance of the TVS diode will quickly drop to an extremely low conduction value, allowing a large current to pass, and at the same time, clamp the vo...
Claims
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IPC IPC(8): H01L27/08H01L21/822
Inventor 周源张彦秀韦仕贡徐鸿卓
Owner BEIJING YANDONG MICROELECTRONICS