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Transverse RC-IGBT device

A device and horizontal technology, applied in the field of horizontal RC-IGBT devices, can solve problems that affect the stability of power electronic systems and devices cannot be turned on normally, and achieve the effect of eliminating the snapback phenomenon

Inactive Publication Date: 2015-12-23
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The Snapback phenomenon is more obvious under low temperature conditions, which will cause the device to fail to turn on normally and seriously affect the stability of the power electronic system

Method used

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Embodiment Construction

[0017] Below in conjunction with accompanying drawing and embodiment, describe technical solution of the present invention in detail:

[0018] A lateral RC-IGBT device of the present invention, such as image 3 As shown, its cell structure includes a P-type substrate 20, an N-type drift region 7 located in the P-type substrate 20, an emitter structure and a gate structure located on one side of the N-type drift region 7, and an N-type drift region located in the N-type drift region. 7 The collector structure on the other side; the emitter structure includes a metal emitter 1, a P-type base region 5 and an N+ emitter region 4, the P-type base region 5 is located in the N-type drift region 7, and the N+ emitter Region 4 is located in P-type base region 5, and the metal emitter 1 is located on the upper surface of P-type base region 5 and N+ emitter region 4; the collector structure includes P+ collector region 9, N+ collector short-circuit region 10, The metal collector 3 and t...

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Abstract

The invention belongs to the semiconductor technology field and especially relates to a transverse RC-IGBT device. Based on a traditional device structure, a N-type resistor area 11 is arranged in a collector electrode structure. Because a thin N resistor area 11 is very thin and possesses a large impedance, when the device begins to carry out positive breakover, a large voltage drop is generated on the thin N resistor area 11 under a low current so that a voltage difference is generated between a P+ collector area 9 and a N-type electric field stop layer and the device is converted into an IGBT mode from a MOSFET mode. By using the new structure provided in the invention, conversion from the MOSFET mode to the IGBT mode can be completed under the low current so that a snapback phenomenon is not generated during a conduction process. Under a follow current diode mode, a PN joint formed by a P-type base area and a N-drift area is under a positively biased state; after the voltage drop exceeds a J1 starting voltage, the device is conducted so as to conduct the current. Therefore, by using the transverse RC-IGBT device provided in the invention, the snapback phenomenon of a traditional RC-IGBT during the positive conduction process is completely eliminated.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a lateral RC-IGBT (reverse conduction insulated gate bipolar transistor) device. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a new type of power electronic device combining MOS field effect and bipolar transistor. It not only has the advantages of easy driving and simple control of MOSFET, but also has the advantages of low conduction voltage of power transistor, large on-state current and small loss. It has become one of the core electronic components in modern power electronic circuits and is widely used in Various fields of the national economy such as communications, energy, transportation, industry, medicine, household appliances and aerospace. The application of IGBT plays an extremely important role in improving the performance of power electronic systems. [0003] In power electronic systems, IGBTs usually need to be used...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/40H01L29/417
CPCH01L29/41708H01L29/7393
Inventor 任敏郭绪阳杨珏琳蔡果牛博李泽宏张金平高巍张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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