Efficient passivation contact crystalline silicon solar cell preparation method

A technology for solar cells and crystalline silicon, applied in the field of solar cells, can solve the problems of unfavorable mass production, high cost, complicated preparation process, etc., and achieve the effects of favorable cost, improved filling factor, and simple process

Active Publication Date: 2015-12-23
TRINA SOLAR CO LTD
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  • Application Information

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Problems solved by technology

[0005] Aiming at the technical problems of complicated preparation process, high cost and unfavorable mass production of passivated contact cells in the prior art, the present invention provides a preparation method of highly efficient passivated contact crystalline silicon solar cells, and simplifies the preparation process of passivated contact solar cells , reduce production cost and realize mass production

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  • Efficient passivation contact crystalline silicon solar cell preparation method
  • Efficient passivation contact crystalline silicon solar cell preparation method

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Embodiment Construction

[0030] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention.

[0031] The preparation method of the highly efficient passivation contact crystalline silicon solar cell of the present invention comprises the following steps:

[0032] Taking P-type single crystal silicon as the silicon substrate as an example, the conventional texturing and diffusion process is carried out first. In the diffusion process, the P-type substrate uses group V elements, such as phosphorus (P), arsenic (As), N-type impurities such as bismuth (Bi), antimony (Sb), etc.; P of group III elements (including boron (B), aluminum (Al), gallium (Ga), indium (In), etc.) are used for N-type substrate diffusion Type impurities to form a P-N junction. In this embodiment, ph...

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Abstract

The invention discloses an efficient passivation contact crystalline silicon solar cell preparation method, which belongs to the technical field of solar cells. A silicon oxide layer which should be etched off and is formed in a diffusion process is used as a barrier layer. The barrier layer is no longer a thin film which is additionally deposited. The preparation process of a cell is greatly optimized. The cost is reduced. According to the preparation method provided by the invention, high open-circuit voltage of the cell is ensured, and at the same time a filling factor of the cell is greatly improved; the photoelectric conversion efficiency of the cell is effectively improved; and the preparation method has the advantage of simple process, and is suitable for large-scale production.

Description

technical field [0001] The invention relates to a method for preparing a solar cell, in particular to a method for preparing a high-efficiency passivation contact crystal silicon solar cell, and belongs to the technical field of solar cells. Background technique [0002] The pursuit of improving battery conversion efficiency while reducing or even maintaining manufacturing costs is the goal that the industry is constantly pursuing and where it can improve its own competitiveness. In terms of high-efficiency batteries, many foreign scientific research institutes and enterprises have carried out a lot of research and developed many high-efficiency batteries with new structures, such as grooved buried gates, selective emitters, laser sintered electrode metal through holes, and emitter through holes. Structure. At present, the successful high-efficiency battery structures include partial diffusion on the back of the passivated emitter, back contact structure, and amorphous silic...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/182Y02E10/546Y02P70/50
Inventor 崔艳峰王子港陈奕峰
Owner TRINA SOLAR CO LTD
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