Method for electrochemically depositing metal on a reactive metal film

A technology for depositing metal and metal films, applied in circuits, electrical components, electrical solid devices, etc., to solve problems such as barrier dissolution and seed corrosion

Inactive Publication Date: 2016-01-27
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Due to the contact potential between different kinds of metals (e.g., Mn barrier material and Cu seed material), the electrode potential of the seed material barrier can shift, resulting in barrier dissolution and seed corrosion

Method used

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  • Method for electrochemically depositing metal on a reactive metal film
  • Method for electrochemically depositing metal on a reactive metal film
  • Method for electrochemically depositing metal on a reactive metal film

Examples

Experimental program
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Effect test

example 1

[0112] Example 1: Conventional acidic chemicals

[0113] Figure 10 The TEM image in shows the dissolution of the manganese-based barrier layer using a conventional ECD acid plating electrolyte. The plating electrolyte contains 40 g / L CuSO 4 , 30 g / L of H 2 SO 4 , 50 ppm of HCl, and catalyst, inhibitor and balance additives (6ml / l, 7ml / l, and 5ml / l). The current density used for electroplating is -9mA / cm 2 .

example 2

[0114] Example 2: Diluted Acidic Chemicals

[0115] Figure 11 The TEM images in show that the manganese-based barrier layer hardly dissolves when using the diluted acid plating electrolyte. The plating electrolyte contains 5 g / L CuSO 4 , 1 g / L of H 2 SO 4 , 8 ppm of HCl, and catalyst, inhibitor and balance additives (3ml / l, 2ml / l, and 0.5ml / l). The current density used for electroplating is from about -20 to about -30 mA / cm 2 In the range.

example 3

[0116] Example 3: Alkaline Chemicals

[0117] Figure 12 The TEM images in show that the manganese-based barrier layer hardly dissolves when using a diluted alkaline plating electrolyte. The plating electrolyte contained 4 mM CuEDA at a pH of 9.3. The current density used for electroplating is -1mA / cm 2 .

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Abstract

In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 6 to about 11 and applying a cathodic potential in the range of about -1 V to about -6 V. The workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V.

Description

[0001] Cross References to Related Applications [0002] This application is a continuation-in-part of U.S. Patent Application No. 14 / 292,385 and U.S. Patent Application No. 14 / 292,426, filed May 30, 2014, the disclosures of which are hereby incorporated by reference at All references are expressly incorporated herein by reference. technical field [0003] This case concerns a method for the electrochemical deposition of metals on reactive metal films. Background technique [0004] Semiconductor devices are manufactured by a manufacturing process of forming circuits on a semiconductor substrate such as a silicon wafer. Metal features, such as copper (Cu) features, are deposited on the substrate to form circuits. A metallic barrier layer can be used to prevent the diffusion of copper ions into surrounding materials. A seed layer can then be deposited on the barrier layer to facilitate copper interconnect plating. [0005] Conventional barrier layers, such as Ta, Ti, TiN, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D5/10
CPCC25D3/02C25D3/38H01L21/76843H01L21/76873H01L21/2885H01L23/53238H01L21/76877H01L21/76882H01L2221/1089H01L2924/0002C25D7/123H01L2924/00
Inventor 罗伊·沙维夫伊斯梅尔·T·埃迈什迪米特里奥斯·阿吉里斯塞尔达·阿克苏
Owner APPLIED MATERIALS INC
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