Light emitting diode and method of fabricating the same

Abstract

Disclosed herein is a light emitting device. The light emitting device is provided to include a light emitting structure, a first electrode pad, a second electrode pad and a heat dissipation pad, and a substrate on which the light emitting diode is mounted. The substrate includes a base; an insulation pattern formed on the base; and a conductive pattern disposed on the insulation pattern. The base includes a post and a groove separating the post from the conductive pattern. An upper surface of the post is placed lower than an upper surface of the conductive pattern, the heat dissipation pad contacts the upper surface of the post, and the first electrode pad and the second electrode pad contact the conductive pattern. With this structure, the light emitting device has excellent properties in terms of electrical stability and heat dissipation efficiency.

Description

technical field

[0001] The invention relates to a light-emitting diode and a manufacturing method thereof, in particular to a light-emitting diode and a manufacturing method thereof, which can avoid reducing the light-emitting area as much as possible and improve the current dispersion effect. Background technique

[0002] Light-emitting diodes are inorganic semiconductor components that can emit light generated by the recombination of electrons and holes. In recent years, people have developed and manufactured light-emitting diodes using nitride semiconductors with direct band gap characteristics.

[0003] Light emitting diodes are classified into horizontal light emitting diodes, vertical light emitting diodes or flip-chip light emitting diodes, etc. according to the position of the electrodes or the way the electrodes are connected to external leads. Recently, as the demand for high-power LEDs has increased, the demand for large-area flip-chip LEDs with high heat dissipat...

Images