Semiconductor device
A semiconductor and substrate technology, which is applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, and semiconductor/solid-state device components, etc., and can solve the problems of reduced component temperature detection accuracy and temperature change of temperature sensors.
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no. 1 Embodiment approach
[0034] First, a schematic configuration of a semiconductor device will be described. In this embodiment, the short-side direction is represented as a row direction, and the long-side direction is represented as a column direction.
[0035] Such as figure 1 as well as figure 2 The illustrated semiconductor device 10 includes a semiconductor substrate 12 on which elements are formed. In the present embodiment, IGBTs are formed on a semiconductor substrate 12 made of single crystal silicon. A rear surface electrode 14 serving as a collector is formed on the entire surface of the semiconductor substrate 12 on the front surface and the rear surface. The back electrode 14 is electrically connected to the current collecting region of the IGBT. In addition, the back electrode 14 is welded to an unillustrated metal member.
[0036] On the other hand, a base electrode 16 is formed on the surface of the semiconductor substrate 12 . The base electrode 16 is formed using a material ...
no. 2 Embodiment approach
[0064] In the present embodiment, the description of the parts common to the semiconductor device 10 described in the above-mentioned embodiment is omitted.
[0065] This embodiment is characterized in that the number of columns in a part of the rows of the divided surface electrodes 18 is different from the number of columns in the remaining rows. Figure 13 An example of a configuration in which the surface electrodes 18 are divided into an odd number in the row direction, and only the middle row is divided into an even number in the column direction, and the remaining rows are divided into an odd number in the column direction is shown. Figure 13 Among them, the surface electrode 18 is divided into three in the row direction, only the second row is divided into two in the column direction, and the first and third rows are divided into three in the column direction.
[0066] The shapes of the two surface electrodes 18 in the second row are approximately planar rectangles an...
no. 3 Embodiment approach
[0076] In this embodiment, the description of the common parts with the semiconductor device 10 shown in the first embodiment is omitted.
[0077] The present embodiment is characterized in that the surface electrodes 18 include two center electrodes 34 adjacent to the facing region 30 where the temperature sensor 22 is arranged, and a plurality of peripheral electrodes 36 arranged to surround the center electrodes 34 .
[0078] Figure 15 An example thereof is shown. Figure 15 Among them, the two center electrodes 34 form an equilateral triangle, and the temperature sensor 22 is arranged in the opposing region 30 between the mutual bases. In addition, the peripheral electrode 36 is divided into two in the row direction and divided into two in the column direction so as to surround the central electrode 34 . The four peripheral electrodes 36 form a pentagon in which one corner of a planar rectangle is cut off. In addition, the surface electrodes 18 divided into a plurality...
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