Unlock instant, AI-driven research and patent intelligence for your innovation.

A dilute magnetic semiconductor material (ca,na)(zn,mn) 2 as 2 and its preparation method

A dilute magnetic semiconductor, 2as2 technology, applied in the field of dilute magnetic semiconductor materials, can solve the problems of poor stability of dilute magnetic semiconductor materials, affecting the application of dilute magnetic semiconductors, etc.

Active Publication Date: 2017-07-21
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the dilute magnetic semiconductor materials in the prior art usually have poor stability in air, and it is difficult to exist stably in the air for a long time, which affects the application of dilute magnetic semiconductors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A dilute magnetic semiconductor material (ca,na)(zn,mn) <sub>2</sub> as <sub>2</sub> and its preparation method
  • A dilute magnetic semiconductor material (ca,na)(zn,mn) <sub>2</sub> as <sub>2</sub> and its preparation method
  • A dilute magnetic semiconductor material (ca,na)(zn,mn) <sub>2</sub> as <sub>2</sub> and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] This embodiment provides a method for preparing a dilute magnetic semiconductor material, including:

[0040] 1) In a glove box filled with argon gas, Zn powder, Mn powder and As powder were uniformly mixed according to the molar ratio of 1.9:0.1:2, and pressed into small discs. Then weigh the Ca particles and the Na block according to the molar ratio of Ca:Na:Zn:Mn:As=0.8:0.2:1.9:0.1:2, and put the mixture disk of Zn powder, Mn powder and As powder on the Ca particle And the bottom of the Na block, and put into the alumina ceramic test tube together;

[0041] 2) Vacuum seal the ceramic test tube with the sample in the quartz tube, then pour 0.2 Bar argon gas into the quartz tube and seal it;

[0042] 3) Put the quartz tube in a high-temperature furnace and sinter at 750°C for 20 hours. After sintering, dilute magnetic semiconductor crystals (Ca 0.8 Na 0.2 )(Zn 0.95 mn 0.05 ) 2 As 2 .

[0043] After placing the dilute magnetic semiconductor material prepared by ...

Embodiment 2

[0046] This embodiment provides a method for preparing a dilute magnetic semiconductor material, including:

[0047] 1) In a glove box filled with argon gas, Zn powder, Mn powder and As powder were uniformly mixed according to the molar ratio of 1.4:0.6:2, and pressed into small discs. Then weigh the Ca particles and the Na block according to the molar ratio of Ca:Na:Zn:Mn:As=0.95:0.05:1.4:0.6:2, and place the mixture disk of Zn powder, Mn powder and As powder on the Ca particle And the bottom of the Na block, and put into the alumina ceramic test tube together;

[0048] 2) Vacuum seal the ceramic test tube with the sample in the quartz tube, then pour 0.2 Bar argon gas into the quartz tube and seal it;

[0049] 3) The quartz tube was sintered in a high temperature furnace at 950°C for 30 hours, and the dilute magnetic semiconductor crystal (Ca 0.95 Na 0.05 )(Zn 0.7 mn 0.3 ) 2 As 2 .

[0050] After placing the dilute magnetic semiconductor material prepared by the meth...

Embodiment 3

[0053] This embodiment provides a method for preparing a dilute magnetic semiconductor material, including:

[0054] 1) Using the solid-state reaction method under normal pressure, mix 99.9% pure Ca particles and As powder at a molar ratio of 1:1, press into tablets, and package them in a vacuum quartz tube, sinter at 600°C, and keep warm In 24 hours, a single-phase CaAs compound powder was obtained;

[0055] 2) Using a solid-state reaction method under normal pressure, mix 99.9% pure Na block and As powder at a molar ratio of 3:1, package them in a vacuum quartz tube, sinter at 500°C, and keep the temperature for 24 hours. get single-phase Na 3 As compound powder;

[0056] 3) In a glove box filled with argon gas, weigh the CaAs powder according to the molar ratio of Ca:Na:Zn:Mn:As=0.9:0.1:1.5:0.5:2, Na 3 As powder, Zn powder, Mn powder and As powder, and put into alumina ceramic test tube together;

[0057] 4) Put the ceramic test tube with the sample into the quartz tube...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a diluted magnetic semiconductor material. The chemical formula of the material is (Ca1-xNax) (Zn1-yMny)2As2, x is larger than 0 and smaller than or equal to 0.2, and y is larger than 0 and smaller than or equal to 0.3. The invention further provides a preparation method for the diluted magnetic semiconductor material. A solid-phase reaction method is utilized, a precursor is sintered in the environment isolated from oxygen, (Ca1-xNax) (Zn1-yMny)2As2 is formed, x is larger than 0 and smaller than or equal to 0.2, y is larger than 0 and smaller than or equal to 0.3, and the sintering temperature adopted by the solid-phase reaction method is 600-1000 DEG C.

Description

technical field [0001] The present invention relates to a kind of 2 Si 2 The dilute magnetic semiconductor material of structure, especially relate to a kind of chemical structure general formula is (Ca 1-x Na x )(Zn 1-y mn y ) 2 As 2 dilute magnetic semiconductor materials. Background technique [0002] Diluted magnetic semiconductor materials have attracted extensive attention due to their potential applications in the field of spintronic devices. Diluted magnetic semiconductors are generally obtained by introducing a small amount of magnetic ions into the semiconductor. Typical based on III-V semiconductors, such as (Ga,Mn)As and (Ga,Mn)N (H.Ohno, et al., Science281,951-956(1998)), Mn 2+ replace Ga 3+ , due to unequal substitution, resulting in very limited chemical solubility, can only be prepared in the form of epitaxial thin films, and the carriers and spins cannot be adjusted separately. [0003] Recently, the dilute magnetic semiconductor Li(Zn,Mn)As based...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C22C1/10C22C1/05C22C30/06
Inventor 靳常青赵侃邓正
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com