Method of forming semiconductor device

Abstract

The invention discloses a forming method of a semiconductor device. The semiconductor device comprises a substrate, wherein the substrate comprises a peripheral region and a core region; the peripheral region is provided with a peripheral region fin part; the core region is provided with a core region fin part; a peripheral region ion implantation is carried out on the substrate of the peripheral region and the peripheral region fin part to form at least one of a peripheral region threshold voltage ion implantation layer and a peripheral region channel cutoff layer; first peripheral region gate structure material layers are formed in the substrate of the peripheral region and the peripheral region fin part; first core region gate structure material layers are formed on the substrate of the core region and the core region fin part; a core region ion implantation is carried out on the substrate of the core region and the core region fin part to form at least one of a core region threshold voltage ion implantation layer and a core region channel cutoff layer; and etching is respectively carried out on the first core region gate structure material layers and the second core region gate structure material layers to form a first core region gate structure and a second core region gate structure respectively. By the method disclosed by the invention, the performance of the semiconductor device can be improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for forming a semiconductor device. Background technique [0002] With the continuous advancement of integrated circuits, that is, IC technology, the number of components integrated on the same chip has evolved from the initial tens of hundreds to the present millions. The performance and complexity of current ICs are far beyond what could have been imagined at the beginning. In order to meet the requirements of complexity and circuit density (that is, the number of devices integrated into a certain area), the minimum feature size, which is known as the "geometric line width" of the device, will become smaller and smaller with the innovation of process technology . [0003] As the feature size of transistors continues to shrink, the demand for smaller transistors is increasing, so fin field effect transistors are developed in transistor technology. [0004] refer to Fig...

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Problems solved by technology

[0017] The problem solved by the present invention is that the performance of the semiconductor structure formed by the method of the prior art is not good

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