Manufacturing method of memory element

Abstract

The invention relates to a manufacturing method of a memory element. The method comprises the steps as follows: a stack layer is formed on a base in a first region and a second region; the stack layer comprises a memory layer, a first conductor layer and a mask layer; the stack layer is patterned to form a plurality of first patterned stack layers; the first patterned stack layers extend along a first direction and extend to the second region from the first region; openings are respectively formed in two sides of the each first patterned stack layer; a packing layer is formed on the base and fills the openings; a second mask layer is formed on the first region of the base and does not cover the packing layer of the second region; with the second mask layer and the packing layer as masks, the first patterned stack layers in the second region and partial base are removed; and a plurality of channels are formed in the base in the second region.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor element, in particular to a method for manufacturing a memory element. Background technique [0002] Memory can be divided into two types: volatile memory (Volatile memory) and non-volatile memory (Non-volatile memory). The data stored in the volatile memory will disappear after the power supply is interrupted; the data stored in the non-volatile memory will not disappear even if the power supply is interrupted. The data in the memory can be read. Therefore, non-volatile memory can be widely used in electronic products, especially portable products. [0003] With the improvement of the integration level and the reduction of the size of memory elements, in order to ensure the electrical isolation between multiple memory cells (Memory cells), multiple isolation structures and dielectric layers must be formed, and multiple isolation structures and dielectric layers must be passed throug...

AI Technical Summary

Problems solved by technology

[0004] This shows that above-mentioned existing memory element manufacture method obviously still has inconvenience and defect in method and use, and needs to be further improved urgently

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general method has no suitable method to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve

Images