Flexible optoelectronic device based on graphene and ii-vi group semiconductor axial p-n junction nanowire array and its preparation method
A technology of nanowire arrays and optoelectronic devices, which is applied in semiconductor devices, photovoltaic power generation, electrical components, etc., can solve problems such as low ductility, lower device density, and reduced effective area of thin films, and achieve simple preparation process, increase device density, Overcome the incompatibility of extensibility and integration
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Embodiment 1
[0037] 1) Place a monolayer graphene layer on a silicon substrate covered with silicon dioxide, such as image 3 -A;
[0038] 2) Utilize the electron beam evaporation method to evaporate 5nm gold nanoparticle film on the graphene layer, as image 3 -B, for catalytic nucleation during the growth of ZnSe axial p-n junction nanowires;
[0039] 3) Prepare ZnSe axial p-n junction nanowire arrays grown on the graphene layer in a horizontal tube furnace using chemical vapor deposition, such as image 3 -C and 3-D;
[0040] 3a) Place the porcelain boat containing the ZnSe powder with a purity of 99.99% in the middle of the horizontal tube furnace, that is, the heating source, and place it on a silicon substrate covered with silicon dioxide and evaporate a 5nm gold nanoparticle film on the surface The graphene layer is placed at the rear of the horizontal tube furnace;
[0041] 3b) Seal the furnace body and evacuate until the pressure in the furnace body is less than 3×10 -3 Pa; Tur...
Embodiment 2
[0056] 1) Place a bilayer graphene layer on a silicon substrate covered with silicon dioxide, such as image 3 -A;
[0057] 2) Evaporate a 7nm gold nanoparticle film on the graphene layer by electron beam evaporation, such as image 3 -B, for catalytic nucleation during the growth of CdTe axial p-n junction nanowires;
[0058] 3) CdTe axial p-n junction nanowire arrays grown on the graphene layer were prepared in a horizontal tube furnace by chemical vapor deposition, such as image 3 -C and 3-D;
[0059] 3a) Place the porcelain boat containing the CdTe powder with a purity of 99.99% in the middle of the horizontal tube furnace, that is, the heating source, and place it on a silicon substrate covered with silicon dioxide and evaporate a 7nm gold nanoparticle film on the surface The graphene layer is placed at the rear of the horizontal tube furnace;
[0060] 3b) Seal the furnace body and evacuate until the pressure in the furnace body is less than 3×10 -3 pa; Turn on the ...
Embodiment 3
[0075] 1) Place 3 graphene layers on a silicon substrate covered with silicon dioxide, such as image 3 -A;
[0076] 2) Utilize the electron beam evaporation method to evaporate 10nm gold nanoparticle thin film on the graphene layer, as image 3 -B, for catalytic nucleation during the growth of ZnS axial p-n junction nanowires;
[0077] 3) Prepare ZnS axial p-n junction nanowire arrays grown on the graphene layer in a horizontal tube furnace using chemical vapor deposition, such as image 3 -C and 3-D;
[0078] 3a) Place the porcelain boat containing the ZnS powder with a purity of 99.99% in the middle of the horizontal tube furnace, that is, the heating source, and place it on a silicon substrate covered with silicon dioxide and evaporate a 10nm gold nanoparticle film on the surface The graphene layer is placed at the rear of the horizontal tube furnace;
[0079] 3b) Seal the furnace body and evacuate until the pressure in the furnace body is less than 3×10 -3 Pa; Turn o...
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