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Light emitting diode (LED) chip and fabrication method thereof

A technology of LED chip and manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as film layer faults, and achieve the effect of improving performance, low cost, and being suitable for large-scale commercial production.

Inactive Publication Date: 2016-02-03
HANGZHOU SILAN AZURE
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] The purpose of the present invention is to provide an LED chip and its manufacturing method to solve the problem of film layer faults formed at the steps

Method used

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  • Light emitting diode (LED) chip and fabrication method thereof
  • Light emitting diode (LED) chip and fabrication method thereof
  • Light emitting diode (LED) chip and fabrication method thereof

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Embodiment Construction

[0056] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0057] Such as Figure 6 As shown, this embodiment provides an LED chip, the LED chip includes a substrate 100, a step 200, a slope 300 and a film layer 400, the step 200 and the slope 300 are formed on the substrate 100, and the slope 300 surrounds the step 200 , and the film layer 400 covers the step 200 , the slope 300 and the substrate 100 .

[0058] At least one of a conductor layer, a semiconductor layer, and an insulating layer is formed on the substrate 100, and the step 300 may be made of metal, metal o...

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Abstract

The invention provides a light emitting diode (LED) chip and a fabrication method thereof. The LED chip comprises a substrate, steps, slopes and a membrane layer, wherein the steps are formed on the substrate, the slopes encircle the steps, and the membrane layer covers the steps, the slopes and the substrate. In the LED chip, the slopes encircle the steps, the problem that the subsequently-formed membrane layer is broken can be effectively solved, thus, the electric leakage problem caused by membrane layer breakage can be solved, and the performance of the inverted LED chip is favorably promoted. Moreover, the slopes are formed by simple processes of spin coating, roasting (or illuminating), etching and the like, and the method is cheap in cost and suitably used for commercial production at a large scale.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic chip manufacturing, in particular to an LED chip and a manufacturing method thereof Background technique [0002] Since its commercialization in the early 1990s, after more than 20 years of development, GaN-based LEDs have been widely used in indoor and outdoor display screens, lighting sources for projection displays, backlight sources, landscape lighting, advertising, traffic instructions, etc. Field, and known as the most competitive new generation of solid-state light source in the 21st century. However, for LEDs to replace traditional light sources and enter the field of high-end lighting, the improvement of their luminous brightness is crucial. [0003] Compared with front-mounted LED chips, when the area of ​​the LED chip is fixed, the LED chip with the flip-chip structure has a larger light-emitting area, which is more advantageous in the face of the challenge of high-luminous ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/46H01L33/38
CPCH01L33/44H01L33/385H01L33/46H01L2933/0016H01L2933/0025
Inventor 马新刚江忠永李东昇潘艳萍丁海生赵进超王洋
Owner HANGZHOU SILAN AZURE
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