FBAR (Film Bulk Acoustic Resonator) based harmonic resonance amplifier

Abstract

The invention discloses an FBAR (Film Bulk Acoustic Resonator) based harmonic resonance amplifier. The FBAR based harmonic resonance amplifier comprises a base, an amplification module, a signal input end, a signal output end and at least a group of FBARs. The amplification module comprises an input end, an output end and a grounding end; at least a group of the FBARs used for harmonic short-circuiting is arranged respectively between the input end of the amplification module and the signal input end and / or between the output end of the amplification module and the signal output end. One group of the FBARs comprises at least a FBAR structure; and one FBAR structure comprises a first electrode, a second electrode and a dielectric film layer arranged between the first electrode and the second electrode. According to the FBAR based harmonic resonance amplifier provided by the embodiment, the amplifier efficiency is increased as the amplification module of the amplifier is subjected to harmonic tuning through each FBAR.

Description

technical field [0001] The invention relates to the technical fields of semiconductor, microelectronics and communication, in particular to a harmonic tuning amplifier based on a film bulk acoustic wave resonator. Background technique [0002] With the development of communication technology, communication systems are gradually developing in the direction of high efficiency, high frequency, high power, broadband and miniaturization. As the core component of the communication system, the efficiency of the amplifier directly affects the efficiency of the communication system. [0003] The drain efficiency equation for an amplifier is as follows: [0004] DE = P Out , f P DC = P Out , f ...

AI Technical Summary

Problems solved by technology

[0008] 1. The increase of harmonic loss restricts the improvement of efficiency

The total harmonic reflection end face is too far away from the core component transistor of the amplifier or the amplifying circuit including the transistor, and the path is too long, resulting in an increase in harmonic loss and a decrease in the high-order harmonic reflection coefficient, making it difficult to achieve true total reflection and partial harmonic reflection. The wave power is lost in the path between the transistor or the amplifier circuit including the transistor and the open circuit or short circuit end face

Amplifiers that are harmonically tuned on the circuit board outside the amplifier package limit efficiency gains

[0009] 2. The harmonic path is too long, the dispersion increases, and the bandwidth of harmonic tuning is limited

It is difficult for the lumped resonator composed of stubs or capacitors and inductors to reflect all the high-order harmonic energy corresponding to the entire operating bandwidth to the transistor or the amplifier circuit including the transistor

[0010] 3. The mutual influence between the fundamental wave matching network and the harmonic tuning network makes the design of the power amplifier circuit more difficult

Harmonic tuning on the circuit board outside the package of the amplifier needs to consider the mutual interference between the harmonic tuning network and the fundamental matching network. Often there is a phenomenon of taking care of one and losing the other, and it is difficult to maximize the performance of the amplifier.

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