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A Method for Etching Grating Grooves by Rotating the Etching Angle

A technology of grating grooves and gratings, applied in diffraction gratings, optics, optical components, etc., can solve problems such as unsuitable processing methods, and achieve the effect of improving efficiency

Active Publication Date: 2017-12-22
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For special groove structures with special requirements on diffraction efficiency, such as sinusoidal grooves, arc grooves and triangular grooves, the existing processing methods are not suitable

Method used

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  • A Method for Etching Grating Grooves by Rotating the Etching Angle
  • A Method for Etching Grating Grooves by Rotating the Etching Angle
  • A Method for Etching Grating Grooves by Rotating the Etching Angle

Examples

Experimental program
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Effect test

Embodiment

[0047] Before the specific embodiment, the idea of ​​this method is introduced: relying on the shielding effect of the photoresist at a certain etching angle, the etched area of ​​the groove bottom changes with the change of the etching angle. The time to be etched under the corner is controlled, that is, the etched depth of the groove bottom is controlled, and a certain groove shape can be obtained.

[0048] Given some preconditions of this method, in the actual etching process, those in the related art should be clear that the two variables most related to the etching groove type are the etching angle and the etching rate. The etching angle determines the effective etching area of ​​the groove bottom to be etched each time, and the etching rate determines the depth of the groove bottom to be etched under a certain etching angle and a certain etching time.

[0049] Simplify the relationship between etching rate and etching angle under certain conditions:

[0050] E r =E r0 ·...

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PUM

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Abstract

The invention discloses a method of etching a grating groove by rotating an etching angle. The method comprises steps: design grating groove parameters such as a groove width, a groove depth and a groove shape are loaded; ion beam etching machine parameters such as an etching speed and an etching ratio are initialized; grating parameters such as a grating line density, an initial grating phtoresist thickness and a grating duty ratio are initialized; a preset groove is cut, and the number of etching angles is determined; an etching angle is determined; the etching time is determined; the etching parameters are optimized, and whether normalized root mean square deviation of the etching result achieves a preset requirement is judged; if the preset requirements is not achieved, the number of etching angles is increased until the normalized root mean square deviation of the etching result meets an actual requirement; and if the preset requirements is achieved, processing is carried out according to calculation parameters. By adopting the method of the invention, the optimal processing parameters for the design groove can be acquired quickly.

Description

technical field [0001] The invention relates to the field of grating groove type etching, in particular to a control method of a grating groove type under ion beam etching. Background technique [0002] Gratings with special grooves have a wide range of uses. Special groove gratings include sinusoidal gratings, blazed gratings, etc. The traditional methods of making special grating grooves include fixed-angle ion beam etching, mechanical scribing and wet etching along the crystallographic direction of Si. [0003] Among the traditional dry etching methods, ion beam etching is the most widely used due to its advantages of good etching uniformity, high etching efficiency, and suitability for large-area processing. For special groove structures with special requirements for diffraction efficiency, such as sinusoidal grooves, arc grooves and triangular grooves, the existing processing methods are not very suitable. [0004] The present invention provides a method for etching ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/18
CPCG02B5/18G02B5/1857
Inventor 曾思为吴丽翔邱克强刘正坤付绍军
Owner UNIV OF SCI & TECH OF CHINA
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