Phase change memory unit test structure and method and phase change memory

Abstract

The invention provides a phase change memory unit test structure and method and a phase change memory. The phase change memory unit test structure at least comprises a word line, a bit line, a source line, a monitoring line, a phase change resistor and a gate transistor, wherein the bit line is connected with one end of the phase change resistor, the other end of the phase change resistor is connected with one end of the gate transistor, the other end of the gate transistor is connected with the source line, and the source line is grounded; and the word line is connected with a control end of the gate transistor, and the monitoring line is connected between the phase change resistor and the gate transistor. According to the phase change memory unit test structure, the monitoring line is added, so that the phase change memory unit test structure is divided into two test parts, the structure is simple, an erasure current test can be performed more accurately, and the electric and storage performances of a phase change memory unit can be better represented.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a phase-change memory unit testing structure and testing method, and a phase-change memory. Background technique [0002] The rapid development of information technology requires a large number of high-performance storage devices. Low voltage, low power consumption, high speed and high density are the inevitable development trends of storage technology. Phase change memory (PCRAM, PhaseChangeRandomAccessMemory) is a new generation of non-volatile solid-state semiconductor memory developed on the basis of CMOS integrated circuits. As the feature size of the device enters the nanometer scale and continues to shrink, the reversible phase change material used for storage is changing. On the small nanometer scale, it will show better performance (low power consumption, high speed, etc.), so it has better comprehensive performance than commercialized FLASH storage technology, an...

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Problems solved by technology

[0008] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of phase-change memory cell testing structure and the test method of wiping current and dynamic resistance value, and the phase-change memory with this phase-change memory cell testing structure, use In order to solve the inaccurate test results of the wiping current and the dynamic resistance of the phase change resistance in the prior art, the test efficiency is low, thus affecting the electrical and storage performance of the phase change memory device unit

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