Formation method of semiconductor device
A semiconductor and device technology, applied in the field of semiconductor device formation, can solve the problems of control gate and selection gate depression, etching, etc., and achieve the effect of preventing depression defects
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[0031] As mentioned in the background, in the prior art, during the integrated fabrication of the flash memory device and the logic transistor, the surface of the control gate and the select gate of the flash memory device is prone to recess defects.
[0032] refer to figure 1, the integrated manufacturing process of the flash memory device and the logic transistor includes: step S101, providing a semiconductor substrate, the semiconductor substrate includes a storage area and a logic area; step S102, forming a number of discrete first polycrystalline The silicon layer has a first opening between adjacent first polysilicon layers, and the first polysilicon layer includes a first portion and a second portion adjacent to the first portion; Step S103, forming a polysilicon layer covering the first polysilicon layer The sidewall and surface of the silicon layer and the control gate dielectric material layer on the surface of the semiconductor substrate; Step S104, forming a second...
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