Gallium nitride power device and manufacturing method thereof

Abstract

The present invention provides a GaN power device and a manufacture method thereof. The GaN power device comprises a substrate, an epitaxial layer formed on the upper surface of the substrate, first metal layers which are radially arranged with intervals, and second metal layers which comprise multiple groups of connection parts and two groups of electrode parts for externally connecting wiring electrodes, wherein multiple groups of convex outward extension steps are etched and formed at the upper part of the epitaxial layer, the first metal layers and the outward extension steps are arranged in a staggered way, the multiple groups of connection parts are formed at the upper surfaces of each group of the outward extension steps and each group of the first metal layers, one group of the electrode parts is communicated with the connection part on each group of the outward extension steps, and the other group of the electrode parts is communicated with the connection part of each group of the first metal layers. According to the GaN power device, the device occupation area in the same power is reduced, under the driving of high current, the current distribution is uniform, and the device overheating caused by the current congestion of a local area is eliminated.

Description

technical field [0001] The invention relates to a gallium nitride power device and a preparation method thereof. Background technique [0002] The structure of GaN power devices in the prior art is as follows figure 1 and figure 2 shown. combine figure 1 and figure 2 , in the prior art, grow N+ and N- gallium nitride epitaxial layers (21, 22) on the substrate 1 (silicon, sapphire, silicon carbide), etch the N-gallium nitride layer to the N+ gallium nitride layer to form fingers The shape step 22, using the liftoff process to deposit a finger-shaped first metal layer 3 between the finger-shaped steps 22, covering the passivation layer 6 between the epitaxial step 22 and the first metal layer 3 and the upper surfaces of the two, and A finger-shaped window is etched on the surface of the passivation layer 6 to expose the surface of the epitaxial step 22 and the first metal layer 3, a second metal layer 40 is deposited in the window of the epitaxial step 22, and the first...

AI Technical Summary

Problems solved by technology

The above structure has the following disadvantages: in order to achieve a certain power, a single device occupies a large area. In addition, under high current drive, the current distribution is uneven, and the current crowding generated by the local area will cause the device to overheat.

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