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Substrate for light-emitting diode chip and manufacturing method thereof

A technology of light-emitting diodes and substrates, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high manufacturing cost, micro-structure size stays at the micron level, and is not easy to use, and achieve the effect of saving equipment costs

Active Publication Date: 2018-08-14
阿利斯教育装备科技(苏州)有限公司
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  • Description
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  • Application Information

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Problems solved by technology

However, in the prior art, the size of microstructures mostly stays at the micron level, and few nanoscale microstructures appear.
The reason is that commonly used nano-microstructure manufacturing methods such as nano-imprinting and nano-level exposure and development equipment costs are high, making the manufacturing cost high and not easy to be widely used.

Method used

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  • Substrate for light-emitting diode chip and manufacturing method thereof
  • Substrate for light-emitting diode chip and manufacturing method thereof
  • Substrate for light-emitting diode chip and manufacturing method thereof

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Embodiment Construction

[0020] see figure 1 , an embodiment of the present invention provides a method for preparing a light-emitting diode chip with a nano-microstructure substrate, which specifically includes the following steps:

[0021] S11: providing a substrate;

[0022] S12: Covering a buffer layer on the substrate, and covering a metal thin film on the buffer layer;

[0023] S13: Tempering the substrate carrying the buffer layer and the metal film at high temperature to make the metal film form nano-scale metal particles spaced apart from each other;

[0024] S14: using metal particles as a mask to etch down the buffer layer to form nanopillars;

[0025] S15: removing the metal particles on the top of the nano-column;

[0026] S16: disposing a patterned photoresist layer on the substrate, exposing and developing to form a plurality of discrete photoresist columns spaced apart from each other on the surface of the substrate;

[0027] S17: Etching the substrate and the photoresist pillars, ...

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Abstract

The present invention provides a manufacturing method for the substrate of a light-emitting diode chip. The method comprises the steps of providing a substrate, covering a buffer layer on the substrate, covering a metal thin film on the buffer layer, subjecting the substrate with the buffer layer and the metal thin film to the high-temperature tempering process to form mutually spaced nano-scale metal particles on the metal thin film, forming a nano-column through downwardly etching the buffer layer with metal particles as a mask, removing metal particles at the top of the nano-column, arranging a patterned photoresist layer on the substrate, exposing to develop the patterned photoresist layer so as to form a plurality of mutually spaced discrete photoresist columns on the surface of the substrate, and etching the substrate and the photoresist columns to form a micron microstructure on the surface of the substrate and further form a nano microstructure on the surface of the substrate. The invention also provides a structure of the substrate of the light-emitting diode chip.

Description

technical field [0001] The invention relates to the field of semiconductor chips, in particular to a substrate of a light emitting diode chip and a manufacturing method thereof. Background technique [0002] Light-emitting diodes have the advantages of small size, high efficiency and long life, and are widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power light-emitting diodes can realize semiconductor solid-state lighting, which has caused a revolution in the history of human lighting, and has gradually become a research hotspot in the field of electronics. In order to obtain high-brightness LEDs, the key is to improve the internal quantum efficiency and external quantum efficiency of the device. At present, the light extraction efficiency of the chip is the main factor limiting the external quantum efficiency of the device. The main reason is that the refractive index difference between the epitaxial material,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/22
Inventor 彭建忠洪梓健
Owner 阿利斯教育装备科技(苏州)有限公司
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