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Manufacturing process of floating gate flash memory device

A manufacturing process and technology of flash memory devices, applied in the field of manufacturing process of floating gate flash memory devices, can solve problems such as reducing charge storage time

Active Publication Date: 2016-03-16
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is necessary to reduce the thickness of ONO, and the storage time of charge will be reduced while reducing the thickness of ONO.

Method used

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  • Manufacturing process of floating gate flash memory device
  • Manufacturing process of floating gate flash memory device
  • Manufacturing process of floating gate flash memory device

Examples

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Embodiment Construction

[0035] In order to facilitate the implementation of the present invention by those having ordinary knowledge in the field to which the present invention pertains, examples of the present invention will be described in detail with reference to the accompanying drawings shown below. However, the present invention can be implemented in various forms and is not limited to the examples described here. In order to more clearly describe the present invention, parts irrelevant to the description in the drawings are omitted; and, throughout the specification, similar drawing symbols are assigned to similar parts.

[0036] Throughout the description of the present invention, the "connection" of a certain part to another part includes not only "direct connection", but also "electrical connection" through other components, and connection through a communication network.

[0037] In the entire description of the present invention, a certain part is located "above" another part, including n...

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Abstract

The invention relates to the technical field of semiconductor manufacture, and especially relates to manufacturing process of a floating gate flash memory device. A first groove and a second groove are prepared in a silicon substrate firstly, floating gates are respectively prepared in the first groove and the second groove, control gates are respectively prepared in the first groove and the second groove then, character lines are prepared then, and peripheral electrodes are formed. Through adoption of the technical scheme, storage units of a unit silicon area are improved, the short-channel effect is reduced to the greatest extent, coupling ratios of the control gates to coupling capacitance values of the floating gates are improved at the same time, and writing / erasing efficiency of a device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing process of a floating gate flash memory device. Background technique [0002] Floating-gate flash memory is a high-density memory that requires maximum utilization of the silicon surface area. Existing flash memory devices are tiled on the surface of silicon, occupying a large amount of surface area, while the depth of silicon cannot be effectively utilized. In addition, as the memory cell continues to shrink, the channel length of the memory cell is also shrinking, and the short channel effect (short channel effect, referred to as SCE) is becoming more and more serious; at the same time, the coupling capacitance of the control gate to the floating gate is also increasing. Small, reducing the control of the control gate to the channel. It is necessary to reduce the thickness of ONO, and the storage time of charge will be reduced while reducin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L21/28H01L21/8247H10B41/60H10B41/30
CPCH01L29/40114H10B41/60
Inventor 燕健硕陈俊李志伟
Owner WUHAN XINXIN SEMICON MFG CO LTD