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Insulating material target

A technology of insulators and targets, applied in the direction of ion implantation plating, coating, electrical components, etc., to achieve the effect of preventing sputtering

Inactive Publication Date: 2016-03-16
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, studies have found that if an alternating current is applied to a target whose outer peripheral thickness is reduced as in the above-mentioned conventional example, discharge occurs in the gap between the target and the shield

Method used

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Examples

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Embodiment Construction

[0018] Next, an insulator target according to an embodiment of the present invention will be described by taking a product assembled in a sputtering apparatus as an example with reference to the drawings. In addition, in each drawing, the same code|symbol is used for the common element, and repeated description is abbreviate|omitted.

[0019] refer to figure 1 , SM is a sputtering device of a magnetron system, and this sputtering device SM has a vacuum chamber 1 that defines a vacuum processing chamber 1a. A cathode unit C is mounted on the inner top of the vacuum chamber 1 . below to the figure 1 The direction of the inner top side of the medium vacuum chamber 1 is described as "up", and the direction toward the bottom side thereof is described as "down". The cathode unit C is composed of an insulator target 2 , a back plate 3 provided on the insulator target 2 , and a magnet unit 4 provided above the back plate 3 .

[0020] Refer again figure 2 , the insulator target 2...

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PUM

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Abstract

Provided is an insulating material target whereby electrical discharge can be prevented from occurring in a gap between a shield and a target when attached to a sputtering device and AC power is supplied. This insulating material target (2) for sputtering devices has a shield (5) around the circumference thereof, when attached to a sputtering device (SM) for the insulating material target (2), and comprises: a plate-shaped target material (21) surrounded by the shield; and an annular support material (22) having an extending section (22a) that has one surface of the target material as a sputter surface (2a) thereof that is sputtered, said extending section being joined to an outer rim section of the other surface of the target material, extending outwards from the circumferential surface of the target material, and having a prescribed gap from the shield. The support material is configured so as to have at least the same impedance as the impedance of the target material, when AC power is supplied to the insulating material target and the sputter surface is sputtered.

Description

technical field [0001] The invention relates to an insulator target used in a sputtering device. Background technique [0002] Currently, an insulating film such as an aluminum oxide film or a magnesium oxide film is used as a tunnel barrier of, for example, MRAM (Magnetoresistive Memory), and a sputtering (hereinafter referred to as "sputtering") device is used to form the insulating film with high productivity. In this device, the substrate and the insulator target (hereinafter also referred to as "target") are relatively arranged in a vacuum chamber, and the sputtering gas is introduced into the vacuum chamber, and an alternating current is applied to the target in cooperation with it in the space between the substrate and the target. The sputtering surface of the plasma sputtering target is formed, and the scattered sputtering particles are attached and accumulated on the substrate to form an insulating film. [0003] Currently, it is known that, for example, in Patent ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCC23C14/082C23C14/3407H01J37/3417H01J37/3426H01J37/345C23C14/34H01J37/3414
Inventor 小梁慎二山本弘辉田口洋治难波隆宏
Owner ULVAC INC