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Alignment measurement method

A technology of alignment measurement and alignment measurement machine, which is applied in optics, instruments, photo-engraving process of pattern surface, etc., and can solve the problems of easy selection of wrong alignment marks or alignment positions, and heavy manual inspection workload. , to achieve the effect of improving correctness, improving accuracy, and ensuring yield

Active Publication Date: 2016-03-30
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide an alignment measurement method, which is used to solve the problem of heavy manual detection workload of the alignment measurement program in the prior art, and easy selection of wrong alignment marks or alignment positions. And other issues

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Embodiment Construction

[0030] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0031] see Figure 3 ~ Figure 4 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbi...

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Abstract

The present invention provides an alignment measurement method at least comprising the following steps: introducing a workpiece to be measured into an alignment measuring machine, and setting silicon wafer alignment mark measurement point positions in the alignment measuring machine; collecting coordinates a plurality of silicon wafer alignment mark measurement points set in a minimum exposure unit; based on the coordinates of the plurality of silicon wafer alignment mark measurement points, calculating the position displacement of the silicon wafer alignment mark measurement points; comparing the position displacement, calculated by the alignment measuring machine, of the silicon wafer alignment mark measurement points with the position displacement, defined on a light cover, of alignment mark points, and if the deviation is within an allowable range, finishing the program; and if the deviation exceeds the allowable range, returning to reset the silicon wafer alignment mark measurement point positions until the deviation is within the allowable range. The method greatly improves the accuracy of setting of a lithography alignment measuring program, ensures the accuracy of the subsequent automatic compensation, thus improving the accuracy of the wafer overlay precision and ensuring the wafer yield.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an alignment measurement method. Background technique [0002] In recent years, with the continuous advancement of semiconductor technology, the functions of devices have also become more and more powerful. However, the requirements for semiconductor manufacturing technology have also increased day by day. Photolithography is one of the key processes in the manufacture of advanced semiconductor devices and large-scale integrated circuits, and is often used to mark the precise lines of gratings, line scales and dials. Photolithography is a chemical processing method that uses a combination of photocopying and chemical etching to prepare precise, fine and complex thin-layer patterns on the surface of a workpiece. The characteristics of corrosion resistance are formed by the reaction, and the photolithography pattern on the mask is engraved on the surface of the workpiece...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F9/00
Inventor 包巧霞邓贵红余志贤
Owner SEMICON MFG INT (SHANGHAI) CORP