Shallow trench isolation structure manufacturing method

Abstract

The invention provides a shallow trench isolation structure manufacturing method, and the method comprises the following steps: firstly providing a semiconductor substrate with the surface being provided with a plurality of trenches, carrying out nitrogen doping of the bottoms and side walls of the trenches, and forming nitrogen doping layers; secondly etching and removing the nitrogen doping layers at the bottoms of the trenches; and finally growing lining oxidation layers with uniform thicknesses at the bottoms and on side walls of the trenches. Through the forming of the nitrogen doping layers on the side walls of the trenches, the method reduces the oxidation speed of the side walls of the trenches in an oxidation forming process of the lining oxidation layers, enable the thicknesses of the lining oxidation layers formed on the side walls and at the bottoms of the trenches to be uniform, avoids the electric leakage of electric appliances, and improves the performances of the devices.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a method for manufacturing a shallow trench isolation structure. Background technique [0002] With the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, greater information storage capacity and more functions of semiconductor devices, semiconductor chips are developing towards higher integration, that is, the characteristic size of semiconductor devices (CD, CriticalDimension) is smaller, and the integration of semiconductor chips is higher. As the integration of semiconductor chips becomes higher, the number and types of semiconductor devices that need to be formed per unit area are also increasing. Saving semiconductor process steps has become a hot research topic now. [0003] When forming a semiconductor device in an existing process, the active region of the semiconductor device is mainly defined by f...

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a shallow trench isolation structure manufacturing method, which is used to solve the problem of the shallow trench isolation structure caused by the uneven thickness of the lining oxide layer on the sidewall and bottom in the prior art. The problem of electric leakage

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