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Method and apparatus for manufacturing group 13 nitride crystal

A nitride crystal and melt technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problems of enhanced adverse effects, increased crystal size, difficulty in manufacturing high-quality, large-sized crystals, etc.

Inactive Publication Date: 2016-03-30
RICOH KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

During such a crystal growth process, the crystal size increases over a long period of time, resulting in the enhancement of the above adverse effects due to the agitation effect of the grown crystal itself
Therefore, it is extremely difficult to manufacture high-quality, large-sized crystals by conventional methods as described above

Method used

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  • Method and apparatus for manufacturing group 13 nitride crystal
  • Method and apparatus for manufacturing group 13 nitride crystal
  • Method and apparatus for manufacturing group 13 nitride crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] In the present embodiment, a gallium nitride (GaN) crystal which is a group 13 nitride crystal is grown under the following conditions in which Figure 9 and 10 As illustrated in , the seed crystal 7 and the structure 14A are placed. First, the image 3 The columnar seed crystal 7A made of GaN explained in was set in a reaction vessel 13 made of alumina in a glove box with a high-purity Ar atmosphere. The seed crystal 7A is inserted into a hole formed in the bottom of the reaction vessel 13 to be fixed (held).

[0064] Next, sodium (Na) liquefied by heating is put into the reaction vessel 13 as a mixed melt (solvent) 6 . After the sodium solidifies, gallium (Ga) and carbon are put therein. Set the molar ratio between gallium and sodium at 0.25:0.75. The carbon content was set at 0.5% relative to the total moles of gallium, sodium, and carbon.

[0065] Thereafter, the reaction container 13 was installed in the inner container 12 , and the inner container 12 was tak...

Embodiment 2

[0070] In this embodiment, the GaN crystal 5 is grown under the following conditions: where Figure 11 and 12 As explained in , the seed crystal 7 and the structure 14B are placed. The four columnar structures 14B are arranged point-symmetrically with respect to the central axis 61 of the reaction vessel 13 . Specifically, the structures 14B and the seed crystal 7 are placed at positions having fourfold symmetry with the central axis 61 as the center of symmetry. Four columnar seed crystals 7A are placed at the center of each structure body 14B. The seed crystal 7A is inserted into the hole formed in the structural body 14 to be fixed. Other crystal growth conditions and rotation conditions were the same as those of Example 1.

[0071] In this configuration, even when the size of GaN crystal 5 is increased to such an extent that GaN crystal 5 itself similarly functions as structure 14B, it does not change the fact that vertical flow is generated in mixed melt 6 . A vertic...

Embodiment 3

[0074] In this embodiment, GaN crystal 5 is grown in a manner similar to that of Embodiment 2, except that Figure 17 other than the rotary controls described in . Such as Figure 11 and 12 As illustrated, the seed crystal 7 and the structure 14B are placed in the reaction vessel 13 . For the rotation control of the rotary rod 22 that rotates the reaction vessel 13, as Figure 17 The rotation method described in uses a loop consisting of acceleration, rotation, deceleration, and stop, followed by acceleration, rotation, deceleration, and stop in the opposite direction of the immediately preceding rotation. This cycle was repeated for 1000 hours at a rotation speed of 15 rpm to allow the crystals to grow.

[0075] By reversing the direction of rotation in this way, the concentration distribution of the dissolved substance in the mixed melt 6 is further uniformed, and a more uniform GaN crystal 5 can be produced.

[0076] Through the crystal growth process, it is possible t...

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Abstract

A method is for manufacturing a group 13 nitride crystal by a flux method. The method includes: placing a seed crystal and a mixed melt that contains an alkali metal or an alkali-earth metal and a group 13 element in a reaction vessel; and rotating the reaction vessel to stir the mixed melt. The reaction vessel includes a structure to stir the mixed melt. More than one seed crystals are installed point-symmetrically with respect to a central axis of the reaction vessel at positions other than the central axis such that a c plane of each of the seed crystals is substantially parallel to a bottom of the reaction vessel. The structure is installed point-symmetrically with respect to the central axis at at least part of the reaction vessel other than the central axis.

Description

technical field [0001] The present invention relates to methods and apparatus for producing Group 13 nitride crystals, and in particular to techniques for producing single crystals of Group 13 nitrides such as gallium nitride and aluminum nitride. Background technique [0002] A flux method (solution method) is known as a method of producing Group 13 nitride crystals. In the flux method, a source gas such as nitrogen is dissolved in a mixed melt (flux) containing an alkali metal or an alkaline earth metal and a Group 13 metal to a supersaturated state, so that Group 13 nitride crystals are dissolved in the mixed melt Spontaneous nuclei or growth with seed crystals as nuclei. [0003] In the flux method, the source gas is dissolved into the mixed melt from the gas-liquid interface between the mixed melt and the source gas. Therefore, the concentration of dissolved matter (nitrogen) in the mixed melt tends to increase near the gas-liquid interface, which can result in a diss...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38C30B9/00
CPCC30B9/00C30B9/10C30B19/02C30B19/06C30B19/068C30B29/406
Inventor 佐藤隆皿山正二林昌弘和田纯一
Owner RICOH KK
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