Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Compound semiconductor material and method for forming an active layer of a thin film transistor device

Inactive Publication Date: 2005-03-24
IND TECH RES INST
View PDF7 Cites 102 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0007] The object of the present invention is to provide a compound semiconductor material for forming an active layer of a thin film transistor device so that the transistors of an active matrix flat panel display are high voltage-durable and have improved device characteristics. Furthermore, the present invention uses the solution process to form the active layer but does not use vacuum evaporation, so it is easy to obtain a large area dispersion, to reduce the cost, and to preclude the toxic substances.
[0013] The present invention provides a new compound semiconductor material, which forms the active layer of a thin film transistor by using the solution process. The thin film transistor is thus durable for high voltage operation and has optimum characteristics. Moreover, the compound semiconductor materials of the present invention are suitable for manufacturing the large size active matrix flat panel display because no vacuum evaporation is needed and the manufacturing cost is therefore reduced relative to prior art. In addition to that, the precursor formed in the solution process is not toxic, so there is no concern about the safety and protection of the operational environment.

Problems solved by technology

Currently, the thin film transistors (TFTs) are classified as the amorphous silicon TFTs and the low temperature polycrystalline silicon TFTs, both of which need to undergo the vacuum evaporation process and the photolithography process, and thus have a high manufacturing cost.
Although the Sol-gel process is simple and the materials used therein have a low toxicity, the characteristics of the transistors produced are not satisfactory.
Although they both have good electrical characteristics, the precursors of CdSe and CdS are heavy metals that are quite toxic.
Therefore, it is not feasible to mass-produce those transistors due to the problems of safety and environmental protection.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Compound semiconductor material and method for forming an active layer of a thin film transistor device
  • Compound semiconductor material and method for forming an active layer of a thin film transistor device
  • Compound semiconductor material and method for forming an active layer of a thin film transistor device

Examples

Experimental program
Comparison scheme
Effect test

embodiment 1

[0024] Embodiment 1

[0025] In the solution process, all of the oxides of group II-VI compounds can use 2-methoxy-ethanol or other alcohols as the solvent. When choosing the solvent, the factors concerned are the solubility of a solute, the ability for film formation of the solution, the removing of the solvent, and the growth of the grain.

[0026] In the present embodiment, ZnO is doped with Mg to form a compound semiconductor material. First, 100 ml of solvent, i.e. 2-Methoxy-ethanol is mixed with 4.58 g of monoethanol amine. Then, 0.06 mole of zinc acetate and 0.015 mole of MgCl2 are further added into the solvent and stirred at 60 degrees C. for 30 minutes to prepare a precursor solution of Zn(0.8)Mg(0.2)O. Afterwards, the precursor solution is coated at the channels of the transistors by Inkjet Printing. Finally, the precursor solution coated at the channels of the transistors is annealed at 500 degrees C. for 2 hours in an oven. With reference to FIG. 4, the SEM picture shows tha...

embodiment 2

[0027] Embodiment 2

[0028] With reference to FIGS. 5A-5D, the process flow for manufacturing a thin film transistor is shown, wherein the bottom gate of the thin film transistor is formed with the compound semiconductor material of the present invention. As shown in FIG. 5A, a glass substrate 5 is provided, and then a first electrode layer is formed thereon. The first electrode layer is made of electrically conductive material, such as ITO, Cr, Al, Mo, Au, Pt, Ag, etc. Next, the first electrode layer is patterned by photolithography and etching processes and a gate electrode 1 is formed. As shown in FIG. 5B, an insulating layer 2 is subsequently deposited on the gate electrode 1. The insulating layer 2 can be made of silicon oxides, silicon nitrides, or PZT. The insulating layer 2 can be deposited by any conventional method. Preferably, the insulating layer 2 is deposited by physical vapor deposition or chemical vapor deposition. As shown in FIG. 5C, a second electrode layer 3 is for...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a compound semiconductor material and, more particularly, to a compound semiconductor material suitable for forming the active layer of a thin film transistor of an active matrix flat panel display. [0003] 2. Description of Related Art [0004] Recently, the active matrix flat panel display has become a popular focus for research and development. In particular, the emphasis of that research and development is directed to the thin film transistor. In addition to that, the flat panel display has been developed to have a large active area, a low price, and a high resolution. Currently, the thin film transistors (TFTs) are classified as the amorphous silicon TFTs and the low temperature polycrystalline silicon TFTs, both of which need to undergo the vacuum evaporation process and the photolithography process, and thus have a high manufacturing cost. Lately, a method for manufacturing a thi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/336H01L29/786
CPCH01L29/66969H01L29/7869
Inventor HO, JIA-CHONGLEE, JEN-HAOLEE, CHENG-CHUNGWANG, YU-WULEE, CHUN-TAOLIN, PANG
Owner IND TECH RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com