Unlock instant, AI-driven research and patent intelligence for your innovation.

Layout processing method in early OPC

A processing method and layout technology, which are applied to the originals for opto-mechanical processing, the photoengraving process of the pattern surface, optics, etc., can solve the problems of complex processing, and achieve the effect of simplifying the processing process and improving the processing efficiency.

Active Publication Date: 2016-04-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, this point is relatively easy to achieve, but there are usually various graphics and units in the layout, and they overlap each other, so the processing is very complicated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Layout processing method in early OPC
  • Layout processing method in early OPC
  • Layout processing method in early OPC

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The method for processing the layout of the OPC early stage of the present invention will be described in more detail below in conjunction with the schematic diagram, wherein a preferred embodiment of the present invention is shown, and it should be understood that those skilled in the art can modify the present invention described here and still implement the present invention beneficial effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0021] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a layout processing method in early OPC. The method comprises the steps as follows: an auxiliary unit is added and patterns in the layout are accommodated together; a relatively small unit and a non-repeated unit are merged by the auxiliary unit; the auxiliary unit and a repeated unit are segmented to form a plurality of segmented parts; the repeated unit contains the segmented parts which overlap with the auxiliary unit as the segmented parts of the auxiliary unit after being segmented; and distributed parallel processing is carried out on the segmented parts. Distributed parallel processing is achieved after segmentation; the processing process is simplified; and the processing efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for processing layouts in the early stage of OPC. Background technique [0002] The production and manufacture of integrated circuits is a very complicated process. Among them, lithography technology is one of the most complicated technologies, and it is also an important driving force to promote the development of integrated circuit technology. The strength of lithography technology directly determines the performance of chips. [0003] The photolithography process usually designs the circuit structure to be manufactured on the mask plate, and then enlarges the circuit structure on the mask plate through the photolithography machine, and copies it to the silicon wafer. However, due to the nature of light waves and the problems of the actual projection exposure system, there will be serious energy loss caused by diffraction limitation or nonlinear filtering of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36
Inventor 金晓亮钟政袁春雨
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP