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Flip Chip LED Package Structure

A technology for light-emitting diodes and packaging structures, which is applied in the directions of printed circuits, printed circuit manufacturing, semiconductor devices, etc., can solve the problems of the flip-chip light-emitting diode structure can not work normally, the light-emitting efficiency of the flip-chip light-emitting diode is reduced, and short circuits are prone to occur. , to avoid short circuit of LED chips, improve stability and light output efficiency

Active Publication Date: 2017-12-26
ZHANJING TECH SHENZHEN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, under normal circumstances, because the conductive glue will flow along the N-electrode and P-electrode with high thermal conductivity, the soldering between the N-electrode and the P-electrode will be caused, resulting in the phenomenon of tin creeping, which will lead to easy contact between the N-electrode and the P-electrode. A short circuit occurs, so that the structure of the flip-chip LED cannot work normally, and the conductive adhesive exposed to the outside of the flip-chip LED due to tin climbing will absorb the light emitted from the edge of the flip-chip LED, resulting in a decrease in the light output efficiency of the flip-chip LED. reduce

Method used

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  • Flip Chip LED Package Structure
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  • Flip Chip LED Package Structure

Examples

Experimental program
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Embodiment Construction

[0014] like figure 1 As shown, the flip-chip LED package structure in the first embodiment of the present invention includes a substrate 10 , a reflector 20 on the substrate 10 , and an LED chip 30 disposed at the bottom of the reflector 20 .

[0015] The substrate 10 is made of a metal material with good thermal conductivity and electrical conductivity, and is in the shape of a flat plate. A protrusion 40 is formed in the middle of the substrate 10 . The longitudinal sections of the protrusions 40 and the substrate 10 are both rectangular.

[0016] Please also refer to figure 2 , the reflector cup 20 is a concave cup body in the middle, which is made of a material with high reflectivity. The reflector cup 20 includes an inner wall 21 and a bottom wall 22 . The middle of the bottom wall 22 protrudes upward to form a convex ring 221 surrounding the protrusion 40 . The top surface of the convex ring 221 is flush with the top surface of the protrusion 40 , and the top surfac...

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PUM

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Abstract

A flip-chip light-emitting diode packaging structure, including a substrate and an LED chip on the substrate, the LED chip includes a P electrode and an N electrode, a protrusion is formed in the middle of the substrate, and the protrusion includes a first connection that is insulated from each other part and the second connecting part, the P electrode and the N electrode of the LED chip are attached to the top surface of the first connecting part and the second connecting part respectively, and the edges of the bottom surface of the P electrode and the N electrode exceed the first connecting part. The connecting portion and the top edge of the second connecting portion. The packaging structure of the flip-chip light-emitting diode in the present invention has stable performance and high light extraction efficiency.

Description

technical field [0001] The invention relates to a semiconductor light-emitting element, in particular to a flip-chip light-emitting diode packaging structure. Background technique [0002] Light-emitting diodes are widely used in lighting sources and display technologies due to their advantages of low production cost, simple structure, low energy consumption and low pollution, small size and easy installation. [0003] A traditional flip-chip light-emitting diode includes an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, and an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, and an N-type semiconductor layer formed on the same side of the flip-chip light-emitting diode and electrically connected to the N-type semiconductor layer and the P-type semiconductor layer. electrode and P electrode. When the flip-chip light-emitting diode is packaged, the flip-chip light-emitting diode is fixed on the substrate thr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/52
CPCH01L33/644H05K1/05H05K3/284H05K2201/09054H05K2201/10106H05K2201/10674H01L33/56H01L33/62H01L33/20H01L33/502
Inventor 林厚德张超雄陈滨全陈隆欣
Owner ZHANJING TECH SHENZHEN
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