Method and device for monitoring service life of gas purifier

Abstract

The invention relates to a method of monitoring a service lifetime of a gas purifier and a device thereof. According to the method, gas is fed into a purifier reacting tank after the gas flow rate F is measured through a flowmeter, purified gas flows out through a gas outlet, tank strain Epsilon is measured through a strain gage, temperature T of the outer surface or the inside of the purifier reacting tank is measured by a temperature sensor, pressure P of the outlet is measured by a pressure sensor, the gas flow rate F, the tank strain Epsilon, the temperature T and the pressure P are sent to a control unit, the measured tank strain Epsilon is rectified according to the real-time temperature T and the real-time pressure P to obtain real strain [Epsilon]R, and the control unit monitors the service lifetime according to the gas flow rate F and the real strain [Epsilon]R and outputs indicator signals to a service lifetime indicator. Real-time service lifetime monitoring for a purifier can be achieved in a low cost through the method and the device, and is free of influences of working conditions such as using pressure and a flow rate, or is influenced by the working conditions such as the using pressure and the flow rate in a controllable manner. The method and the device can be widely used for service lifetime monitoring for gas purifiers for He, Ne, Ar, Kr, Xe, N2, H2, and the like.

Description

technical field [0001] The invention belongs to the technical field of service life monitoring of a gas purifier, and in particular relates to a method and a device for monitoring the service life of a gas purifier. Background technique [0002] High-purity gases are widely used in the electronics industry, such as large-scale integrated circuits, liquid crystal displays, solar cells, LEDs, optical fibers and other production processes, which require a large amount of high-purity gases. In some applications, there are extremely strict requirements on the purity of the gas. For example, in the MOCVD epitaxial growth process of LEDs, a large amount of H 2 and N 2 , and it is usually required that the purity of the gas before entering the equipment is above 8N (99.999999%), that is, the impurity content in the gas is less than 10ppb (1ppb=10 -9 ). In order to meet the above gas purity requirements, it is usually necessary to use a gas purifier. [0003] Common gas purifiers...

AI Technical Summary

Problems solved by technology

This method can effectively characterize the service life of the purifier, but it can only be applied to the life monitoring of the inert gas purifier, and there is a fatal safety hazard in the application of the hydrogen purifier, and ultra-high-purity hydrogen is an ultra-high-purity gas commonly used in the electronics industry

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