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Thin film manufacturing method and atomic layer deposition apparatus

An atomic layer deposition and thin film technology, applied in coatings, metal material coating processes, gaseous chemical plating, etc. The effect of increasing process speed

Inactive Publication Date: 2016-04-27
K C TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at low temperatures, the silicon nitride film may not be formed or the quality of the film may drop sharply
In addition, it is difficult to form silicon nitride film using ALD process due to lower reaction

Method used

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  • Thin film manufacturing method and atomic layer deposition apparatus
  • Thin film manufacturing method and atomic layer deposition apparatus
  • Thin film manufacturing method and atomic layer deposition apparatus

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Embodiment Construction

[0025] Hereinafter, some embodiments of the present invention will be described in detail with exemplary drawings. Symbols are attached to constituent elements in each drawing, and it should be noted that the same constituent elements are given the same symbols even if they are shown in other drawings. Furthermore, when explaining the embodiments of the present invention, when a detailed description of a related known structure or function is judged to hinder the understanding of the embodiments of the present invention, the detailed description is omitted.

[0026] In addition, terms such as first, second, A, B, (a), and (b) may be used when describing constituent elements of the embodiments of the present invention. The term is only used to distinguish structural elements different from the structural element, and the nature, order or sequence of the relevant structural elements is not limited by the term. When it is described that some structural elements are "connected", ...

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Abstract

A method of manufacturing a silicon nitride (Si3N4) film at low temperature using an atomic layer deposition (ALD), and an ALD apparatus for the same are disclosed. The method of manufacturing a Si3N4 film uses a silicon precursor material including silicon as a source gas, an N2 gas activated by plasma as a reaction gas, and an N2 gas as a purge gas, and manufactures a Si3N4 film by providing gases in an order of the source gas, the purge gas, the reaction gas, and the purge gas.

Description

technical field [0001] The present invention relates to a method of forming a thin film including a silicon nitride film using an atomic layer deposition method and an atomic layer deposition apparatus therefor. Background technique [0002] Usually, the method of depositing a certain thickness of film on substrates such as semiconductor substrates or glass includes: physical vapor deposition method PVD (physical vapor deposition) using physical conflicts similar to sputtering (sputtering); chemical vapor deposition method CVD (chemical vapor deposition) using chemical reactions Wait. Recently, the design rules of semiconductor devices are becoming thinner, thin films with fine patterns are required, and the step difference in regions where thin films are formed has increased. Therefore, due to this tendency, a fine pattern having an atomic layer thickness can be formed very uniformly. [0003] Since the ALD process utilizes a chemical reaction between gas molecules contai...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCH01L21/02219C23C16/345C23C16/45536H01L21/0217H01L21/02274H01L21/0228C23C16/34C23C16/45529
Inventor 朴成贤申寅澈李根雨金京俊
Owner K C TECH