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MEMS (Micro-Electromechanical System) capacitive ultrasonic sensor and manufacturing method thereof

An ultrasonic and capacitive technology, which is used in the measurement of ultrasonic/sonic/infrasonic, piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problem of high parasitic capacitance and high substrate impedance Insulation layer charging and other issues, to achieve the effect of reducing parasitic capacitance, short production cycle, and improving sensitivity

Inactive Publication Date: 2016-05-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

In the common CMUT structure, the substrate or diaphragm is used as an integrated electrode during operation. There are many factors such as parasitic capacitance, high impedance of the substrate, and charging of the insulating layer, and many advantages of the CMUT cannot be fully utilized.

Method used

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  • MEMS (Micro-Electromechanical System) capacitive ultrasonic sensor and manufacturing method thereof
  • MEMS (Micro-Electromechanical System) capacitive ultrasonic sensor and manufacturing method thereof

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Embodiment Construction

[0028] see figure 1 and figure 2 As shown, the present invention provides a MEMS capacitive ultrasonic sensor, comprising:

[0029] A glass substrate 10, the middle of the glass substrate 10 is a concave cavity 10', grooves 10a, 10b are respectively opened on both sides of the cavity 10', the depth of the groove 10a is the same as that of the cavity The cavity 10' has the same depth, and the groove 10b has the same depth as the lower surface of the upper electrode 12;

[0030] The lower electrode 11 is made at the bottom of the concave cavity 10' of the glass substrate 10;

[0031] A top layer of silicon 13, which is made on the glass substrate 10 and covers the cavity 10', the top layer of silicon 13 is a vibrating membrane, and the thickness of the vibrating membrane is 0.5-10 μm;

[0032] An upper electrode 12, which is made on the lower surface of the top layer of silicon 13, and is positioned above the cavity 10', corresponding to the lower electrode 11;

[0033] A p...

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Abstract

The invention discloses an MEMS (Micro-Electromechanical System) capacitive ultrasonic sensor and a manufacturing method thereof. The MEMS capacitive ultrasonic sensor comprises a glass substrate, a lower electrode, top silicon, an upper electrode and a protective layer, wherein a concave cavity is formed in the middle of the glass substrate; both sides of the cavity are provided with grooves respectively; the lower electrode is manufactured at the bottom of the concave cavity of the glass substrate; the top silicon is manufactured on the glass substrate, and covers the cavity; the top silicon 13 is a vibrating film; the upper electrode is manufactured on a lower surface of the top silicon and positioned above the cavity, and corresponds to the lower electrode; the protective layer is manufactured in the grooves in both sides of the glass substrate, and covers the top silicon and the glass substrate; a window is formed in the protective layer of the groove; and an upper extraction electrode and a lower extraction electrode are connected with the upper electrode and the lower electrode respectively. Through adoption of the MEMS capacitive ultrasonic sensor, the parasitic capacitance can be reduced, and the sensitivity of the sensor can be increased.

Description

technical field [0001] The invention relates to a capacitive ultrasonic sensor in the field of sensors, in particular to a MEMS capacitive ultrasonic sensor and a preparation method thereof. Background technique [0002] Ultrasonic sensors have a wide range of applications in medical imaging, industry, and defense. In recent years, a capacitive ultrasonic sensor has gradually become one of the main research directions of ultrasonic transducers. Compared with piezoelectric ultrasonic transducers, capacitive ultrasonic transducers have the advantages of high sensitivity, wide bandwidth, and low mechanical impedance, and adopt large-scale integrated circuit manufacturing methods, which are easy to integrate with electronic circuits and have low manufacturing costs. Wider range of applications. In the common CMUT structure, the substrate or diaphragm is used as an integrated electrode during operation. There are many factors such as parasitic capacitance, high impedance of the...

Claims

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Application Information

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IPC IPC(8): B81B3/00B81C3/00G01H11/06
CPCB81B3/0086B81B3/0021B81C3/001G01H11/06
Inventor 王小青宁瑾俞育德魏清泉刘文文刘元杰蒋莉娟
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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