Floating voltage-controlled memristor simulator circuit

A memristor and floating technology, applied in logic circuits, instruments, electrical components, etc., can solve problems such as voltage-controlled memristors that do not yet exist

Active Publication Date: 2016-05-04
芜湖启博知识产权运营有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, although the existence of a small amount of memristor equivalent circuits has been reported, they mainly focus on the equivalent circuits of magneto-controlled memristors and charge-controlled memristors, and there is no equivalent circuit of volta...

Method used

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  • Floating voltage-controlled memristor simulator circuit
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  • Floating voltage-controlled memristor simulator circuit

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Embodiment Construction

[0014] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0015] The theoretical starting point of the present invention is the general expression of the volt-ampere characteristic of the voltage-controlled memristor:

[0016] i=G(z,u)u(t),

[0017] d z d t = f ( z , u ) .

[0018] where the variable z represents the state of the memristor.

[0019] like figure 1 As shown, the analog equivalent circuit of the voltage-controlled memristor in this embodiment includes an integrated operational amplifier U1, multipliers U2, U3, and a small amount of resistors and capacitors. The integrated operational amplifier U1 mainly implements differential amplification, inverting addition, integral operat...

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Abstract

The invention discloses a floating voltage-controlled memristor simulator circuit, comprising an integrated operational amplifier U1, multipliers U2 and U3 and a few resistors and capacitors, wherein one resistor is connected to an input end; another resistor is connected with the integrated operational amplifier U1, and the integrated operational amplifier U1 is used for implementing differential amplification, inverse addition, integral operation and inverse amplification; the integrated operational amplifier U1 is connected with the multipliers U2 and U3, and the multipliers U2 and U3 are connected with each other and used for multiplying signals. The simulator circuit realizes the volt-ampere characteristics of a voltage-controlled memristor through a simulation circuit.

Description

technical field [0001] The invention belongs to the technical field of circuit design and relates to a memristor simulator circuit, in particular to the design and realization of a floating voltage-controlled memristor simulator circuit. Background technique [0002] Memristor is the fourth type of circuit element in parallel with resistors, capacitors, and inductors in the circuit. It was proposed by Cai Shaotang in 1971, and the memristor was realized in HP Lab in 2008. Memristor has non-volatile and nonlinear properties, which can be applied in non-volatile memory, artificial neural network and circuit design. However, because existing memristors adopt nanotechnology, there are defects of difficulty in implementation and high cost, and memristors have not yet entered the market as an actual component. Therefore, it is of great significance to design a memristor equivalent circuit and use it to replace the actual memristor for experimental and applied research. Even if t...

Claims

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Application Information

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IPC IPC(8): H03K19/00G11C13/00
CPCG11C13/0009H03K19/00
Inventor 王光义许碧荣
Owner 芜湖启博知识产权运营有限公司
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