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Magnetic sputtering target material

The technology of a sputtering target and a magnetron sputtering system, which is applied in the field of sputtering targets, can solve the problems of high update cost, long period, and insufficient magnetic field strength on the surface of the magnetic target, and achieve reduced production costs, simple methods, and improved The effect of utilization

Inactive Publication Date: 2016-05-25
HANGZHOU LION MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in actual production or research, if sputtering of targets outside the design of the machine is required, especially the sputtering of magnetic targets, it is generally believed that magnetic targets cannot be placed directly on the target holder of non-magnetic targets. , because the shielding effect of the magnetic target on the magnetic field makes the magnetic field strength on the surface of the magnetic target not enough to complete the sputtering
Therefore, it is often necessary to use a new magnetron sputtering system at this time, or redesign the sputtering cathode device in the original sputtering system, use a specific target seat, and the update cost is high and the cycle is long

Method used

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Examples

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Embodiment 1

[0025] The material of the sputtering target of the magnetic target is a magnetic material NiPt target (Ni content 95%, Pt content 5%), in figure 1 On the basis of the original aluminum circular planar target shown, the following adjustments have been made, and the redesigned NiPt magnetic alloy target is as follows: image 3 shown.

[0026] 1) Thinning the sputtering target by 0.4-0.6 mm, for example, the thickness H1 of the sputtering target 1 in this embodiment is reduced from 3 mm of the original aluminum target to 2.5 mm. The reason for this is to thin the magnetic target to a certain extent, so that the magnetic target cannot completely shield the magnetic field, so that if a part of the magnetic flux is satisfied to saturate the magnetic target, the rest of the magnetic flux will pass through the surface of the target to reach the magnetic field. Controlled sputtering requirements. However, because in the actual sputtering process, the magnetic field is not evenly dis...

Embodiment 2

[0030] This embodiment still takes the magnetic target NiPt alloy target (Ni content 95%, Pt content 5%) as an example, in figure 1 On the basis of the original aluminum circular planar target shown, the following adjustments have been made, and the redesigned NiPt magnetic alloy target is as follows: Figure 4 shown.

[0031] 1) This part of the overall adjustment scheme of this embodiment is exactly the same as part 1) in Embodiment 1, and the thickness H1 of the sputtering target 1 is reduced from 3 mm of the original aluminum target to 2.5 mm;

[0032] 2) This part of the overall adjustment scheme in this embodiment is the same as the method in 2) in Embodiment 1, the difference is that the inner diameter R of the final sputtering surface 1a ranges from R2210 to R2336mm, for example, R2273mm is used in this embodiment. Different from Embodiment 1, this embodiment enlarges the sputtering surface R in this part, so that compared with the spherical surface with smaller R in ...

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Abstract

The invention provides a magnetic magnetron sputtering target material. The magnetic sputtering target material and a nonmagnetic target material share a magnetron sputtering system, wherein the nonmagnetic target material is a circular planar target material, and comprises a sputtering target and a backboard. The magnetic target material is formed through the following steps: 1, thinning the sputtering target; and 2, changing the sputtering surface of the sputtering target and the back of the sputtering surface to spherical surfaces from planes, changing the welding surface of the backboard to an inner spherical surface from a plane, and allowing the welding surface to be completely applied to the back of the target; or further thinning the backboard from the cooling surface of the main body of the backboard to obtain a deformed magnetic target material. The magnetic target material uses the nonmagnetic target material-shareable sputtering system to sputter, and the thickness uniformity of an obtained sputtering film reaches 2.0% or below.

Description

technical field [0001] The invention relates to the technical field of sputtering targets, in particular to a magnetron sputtering target of magnetic materials. Background technique [0002] Magnetron sputtering technology has developed into one of the most important technologies in industrial coating production. Magnetron sputtering is the use of magnetic field to control the plasma generated by glow discharge to bombard the particles on the surface of the target and deposit them on the surface of the substrate to complete the film formation process. Therefore, the film formation of magnetron sputtering is very good or bad. depends on the uniformity of the magnetic field distribution on the surface of the target. [0003] There are two types of targets for magnetron sputtering: non-magnetic and magnetic. Compared with the non-magnetic target, the magnetic sputtering target has a high magnetic permeability, so that the magnetron magnetic field forms a closed loop in the ta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
Inventor 张瑞丽任瑞
Owner HANGZHOU LION MICROELECTRONICS CO LTD