Flip-chip rcled for visible light communication and preparation method thereof
A visible light communication, LED chip technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of silver layer agglomeration, low reliability, low reflectivity, etc., to reduce difficulty, meet high light efficiency, improve frequency response and The effect of quantum efficiency
Active Publication Date: 2017-10-31
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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In addition, the nitride DBR of flip-chip RCLEDs is adjacent to the n-type semiconductor layer, which can be significantly close to the active area. However, the traditional flip-chip structure generally uses the P electrode containing silver metal as the lower reflector, which is prone to silver layer agglomeration after annealing. The problems of low reliability and low reflectivity caused by
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[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0035] figure 1 It is a schematic diagram of a vertical cross-sectional structure of a flip-chip RCLED for visible light communication according to an embodiment of the present invention, such as figure 1 As shown, the flip-chip RCLED for visible light communication includes:
[0036] chip substrate 10;
[0037] Wherein, the chip substrate 10 is sapphire or silicon carbide.
[0038] A low-temperature GaN layer 11 and a u-GaN layer 12 formed sequentially on the chip substrate 10 as a buffer layer;
[0039] A nitride DBR layer 13 formed on the u-GaN layer 12 as an upper reflector;
[0040] An n-type semiconductor layer 14 is formed on the nitride DBR layer 13, one side of the n-type semiconductor layer 14 is formed with...
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The invention discloses an inverted RCLED (resonant cavity light-emitting diode) for visible light communication. The inverted RCLED comprises an LED chip and an inverted substrate, wherein the LED chip comprises a chip substrate, a buffer layer, a nitride DBR layer and an oxide DBR layer for forming a resonant cavity, an n type semiconductor layer, an active layer, a p type semiconductor layer, a transparent conductive layer and p, n electrodes, wherein the inverted substrate comprises a supporting substrate, an insulating layer, and P and N electrode bonding pads from the bottom up in sequence, wherein the P and N electrode bonding pads are insulated and isolated from each other; and the LED chip is electrically connected with the P and N electrode bonding pads of the inverted substrate through metal solder balls or eutectic soldering separately. According to the inverted RCLED, the high-quality-factor and short-cavity-length inverted RCLED can be obtained, so that the frequency response and quantum efficiency of the LED can be improved cooperatively so as to satisfy the light source requirements of high lighting effect and high bandwidth for optical communication.
Description
technical field [0001] The invention belongs to the field of lighting sources, in particular to a flip-chip RCLED and a preparation method thereof, in particular to a flip-chip RCLED for visible light communication with high light efficiency and high bandwidth and a preparation method thereof. Background technique [0002] White LEDs are energy-saving, environmentally friendly, and have a reliable lifespan. By loading high-speed modulation signals that cannot be sensed by the human eye to transmit data, they can realize the function of visible light wireless communication while taking into account lighting. However, the frequency response of the LED also directly determines the modulation bandwidth and transmission speed of the visible light communication system. [0003] RCLED (Resonant Cavity Light-Emitting Diode, Resonant Cavity Light-Emitting Diode) is a light-emitting diode with an active region in a resonant cavity. By changing the mode structure of the vacuum electrom...
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IPC IPC(8): H01L33/10H01L33/00
CPCH01L33/007H01L33/10
Inventor 杨超赵丽霞朱石超刘磊于治国王军喜李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI