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SiC@SiO2 coaxial nanocable and preparation method thereof

A nano-cable and coaxial technology, applied in the field of one-dimensional nano-materials and their preparation, can solve the problems of easy oxidation on the surface of SiC nano-fibers, damage to the surface morphology and structure, and difficulty in controlling the product structure, and achieve excellent uniformity, Easy-to-control, low-cost effects

Active Publication Date: 2016-06-01
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the invention is to provide a SiCSiO 2 The coaxial nanocable and its preparation method solve the problems that the surface of SiC nanofibers is easily oxidized, and the surface morphology and structure are destroyed. At the same time, it solves the problems of complex preparation methods, high cost, difficult product structure control and large-scale mass production. And other issues

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  • SiC@SiO2 coaxial nanocable and preparation method thereof
  • SiC@SiO2 coaxial nanocable and preparation method thereof
  • SiC@SiO2 coaxial nanocable and preparation method thereof

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specific Embodiment approach 1

[0022] Specific implementation mode 1: This implementation mode provides a SiCSiO 2 Coaxial nanocable, which is a kind of "core part is 3C-SiC, outer layer is amorphous SiO 2 "One-dimensional nanomaterials with core-shell structure, SiO 2 Tightly clad outside the SiC of the core, where the bonding at the interface is a tight bonding at the atomic scale. SiCSiO 2 The length of the coaxial nano-cable can reach the order of centimeters, and the diameter can be controlled at 10-1000nm, in which the diameter of the core SiC is 2-1000nm, and the outer shell SiO 2 The layer thickness is 1-500nm.

[0023] Depend on figure 1 It can be seen that a typical SiCSiO 2 The core of the coaxial nanocable is surrounded by SiC nanofibers and an outer uniform cladding layer. Figure 2-4 It can be seen that the core is cubic phase 3C-SiC, and the outer cladding layer is an amorphous layer; Figure 5 It can be seen that the dynamic oxidation process of SiC nanofibers is controlled by thermal...

specific Embodiment approach 2

[0024] Specific embodiment two: the difference between this embodiment and specific embodiment one is that SiCSiO 2 The length of the coaxial nano-cable can be controlled within 10um~12cm, the diameter is 10~1000nm, the diameter of the core SiC is 2~1000nm, and the outer shell SiO 2 The layer thickness is 1-500nm.

specific Embodiment approach 3

[0025] Specific embodiment three: the difference between this embodiment and specific embodiments one and two is that a single SiCSiO 2 The length of the coaxial nano-cable reaches 5-40mm, and the diameter is 100-200nm, in which the core SiC diameter is 2-198nm, and the shell SiO 2 The layer thickness is 2-99nm.

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Abstract

The invention discloses a SiC@SiO2 coaxial nanocable and a preparation method thereof. The SiC@SiO2 coaxial nanocable is one-dimensional nanomaterial of which the "core part is 3C-SiC and the external layer is amorphous SiO2" with a core shell structure. SiO2 closely wraps outside core part SiC, and combination of the interface is close combination of the atomic scale. The length of the SiC@SiO2 coaxial nanocable can be the centimeter magnitude, and the diameter can be controlled within 10-1000nm, wherein the diameter of the core part SiC is 2-1000nm, and the thickness of the external shell layer SiO2 is 1-500nm. The problems that the SiC nanofiber surface is liable to be oxidized and the surface form and structure are damaged can be solved, and the problems that existing preparation methods are complex, high in cost, difficult in control of the product structure and difficult in scale production can also be solved so that the SiC@SiO2 coaxial nanocable has advantages of being simple in preparation technology, energy-saving and environment-friendly, easy to control, low in cost and high in production rate.

Description

technical field [0001] The invention relates to a one-dimensional nanometer material and a preparation method thereof. Background technique [0002] SiCSiO 2 Nanocables have good mechanical properties and field emission properties, and have great prospects in the application of strengthening and toughening composite materials and making field emission devices. At the same time, SiCSiO 2 Coaxial nanocables have excellent photoluminescent properties and can be made into optical components for various purposes. In addition, SiCSiO 2 Coaxial nanocables can also be used in harsh or extreme environments such as high temperature, high frequency, high power, and space radiation. Therefore, SiCSiO 2 Coaxial nanocables have broad application prospects. [0003] Currently, although on SiCSiO 2 There are many reports on coaxial nanocables, but the existing preparation methods generally have complex processes, long cycle times, and high costs, and SiO 2 The coating layer is uneve...

Claims

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Application Information

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IPC IPC(8): H01B1/04H01B3/02H01B7/00H01B13/00H01B13/06B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01B1/04H01B3/025H01B7/0009H01B13/0036H01B13/06
Inventor 张晓东杨路路周宇航侯思民赵义刘丁元郭禹泽赵培瑜章泰锟贾占林黄小萧温广武
Owner HARBIN INST OF TECH
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