Unlock instant, AI-driven research and patent intelligence for your innovation.

Recycling and reuse method of bad dram grains

A defective, wafer technology, applied in the manufacturing of electrical components, electric solid-state devices, semiconductor/solid-state devices, etc., to achieve the effect of low cost, improved product yield, and increased corporate income

Active Publication Date: 2018-03-27
PAYTON TECHNOLOGY (SHENZHEN) CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the damaged circuits of most bad chips only occupy a small part of the entire circuit area, which makes it possible to conduct functional tests on some circuit blocks and then screen out products with half the storage capacity available

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Recycling and reuse method of bad dram grains
  • Recycling and reuse method of bad dram grains
  • Recycling and reuse method of bad dram grains

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] A kind of recycling method embodiment of bad DRAM chip of the present invention is characterized in that comprising the following steps:

[0018] 1) During the wafer test process, the upstream fab makes a preliminary classification of each chip according to the address range where failures occur during the normal full-capacity test process. The left half of the Bin is a good chip: A15=0 and half of the capacity is qualified, and the Bin right Half-good chip: A15=1 half capacity is qualified...mark each chip on the Wafer Mapping;

[0019] 2) The packaging factory grabs and pastes the same type of half-capacity chips on the same substrate through the wafer alignment map during die bonding, and places different types of chips separately;

[0020] 3) For each type of half-capacity chip, the corresponding dedicated wire bonding method is specially customized, so that the corresponding address line is forced to be connected to the ground pin of the substrate or connected to t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for recycling bad DRAM grains. During the wafer test, the basic memory unit is tested for function, and the distribution of bad areas is recorded. Bins of the same bad type are screened in advance, and only half-capacity of the corresponding type is selected during packaging. Die, to avoid useless die from being packaged. At the same time, a special Wire Bonding method is adopted, and the test program of the automatic test equipment is modified to carry out targeted tests on the packaged chip particles. Its advantages are low cost and strong compatibility. At the same time, by recycling half-capacity chips, the product output rate can be improved and corporate income can be increased. The waste of packaging cost is reduced by half, and only one half-capacity mode needs to be tested during the test, which saves the test cost by up to 75%.

Description

technical field [0001] The invention relates to a DRAM dynamic random access memory, in particular to a method for recycling defective DRAM chips. Background technique [0002] DRAM (Dynamic Random Access Memory) memory chips are packaged by chips on DRAM wafers. A single wafer usually contains several different types of chips (die)—good chips, process monitoring chips, and bad chips. chip. Normally, good chips will be cut and packaged for subsequent chip testing, while process monitoring chips and bad chips will be discarded and treated harmlessly. Defective chips refer to chips (circuit units) that cannot basically meet the characteristics of the device or design specifications due to defects in some circuits. However, the damaged circuits of most bad chips only occupy a small part of the entire circuit area, which makes it possible to conduct functional tests on some circuit blocks and then screen out products with half the storage capacity available. [0003] In matur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L21/67H01L21/8242H10B12/00
CPCH01L21/67271H01L21/67282H01L21/67294H01L22/20H10B12/01
Inventor 黄曦黄华
Owner PAYTON TECHNOLOGY (SHENZHEN) CO LTD