Method for improving film thickness uniformity in gradient pressure mode

A gradient pressure and mode technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of occupying equipment usage time, reducing equipment usage efficiency, time control and equipment usage cost increase, etc., to improve quality , Improve work efficiency, reduce the effect of test steps

Active Publication Date: 2016-06-08
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

This method generally requires multiple tests to obtain good uniformity: not only the cost of time, control and equipment use is increased; but also the use time of the equipment will be occupied, which reduces the use efficiency of the equipment

Method used

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  • Method for improving film thickness uniformity in gradient pressure mode
  • Method for improving film thickness uniformity in gradient pressure mode

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Embodiment Construction

[0015] The present invention is described in detail below in conjunction with accompanying drawing:

[0016] figure 2 It is a flowchart for forming a linear oxide layer with uniform film thickness. Please refer to figure 2 , the method for improving the uniformity of the film thickness in the gradient pressure mode provided by the present invention comprises the following steps:

[0017] Step S1, using in-situ gas generation equipment;

[0018] Step S2 , forming a linear oxide layer on the shallow trench isolation by using the gas pressure of the in-situ gas generation device in a gradient pressure mode during the infiltration process reaction stage of the control sheet.

[0019] The invention adopts the gradient pressure mode in the reaction stage of the infiltration process, avoids the influence of the constant pressure mode on the edge of the control plate, and thus obtains the trench isolation linear oxide layer with uniform film thickness.

[0020] Wherein, the cont...

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Abstract

The invention discloses a method for improving film thickness uniformity in a gradient pressure mode. The method comprises the following steps: S1, ISSG (in-situ steam generation) equipment is adopted; S2, in STI (shallow trench isolation) is realized through steam pressure of the ISSG equipment with the gradient pressure mode so as to form a liner oxidation layer in a penetration process reaction stage of a wafer. The film thickness uniformity of the liner oxidation layer for STI is improved, and the method has the effects that the cost is reduced, the working efficiency is increased and the product quality is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving film thickness uniformity in a gradient pressure mode. Background technique [0002] Shallow trench isolation (Shallow Trench Isolation, STI) linear oxide layer (lineroxidation) is a key process step in the manufacturing process of semiconductor devices. The shallow trench isolation linear oxide layer has the functions of repairing the substrate damage caused by the shallow trench etching and rounding the sharp corners caused by the shallow trench etching process. Therefore, the quality of the shallow trench isolation linear oxide layer has a great influence on the stability and reliability of the device. In this process step, there are high requirements for the film thickness and uniformity of the shallow trench isolation linear oxide layer. . [0003] The process step of forming the shallow trench isolation linear oxide layer is perf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762H01L21/02
CPCH01L21/02225H01L21/02227H01L21/762
Inventor 陆叶涛
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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