123results about How to "Reduce test steps" patented technology

The invention relates to an one-time connection stroke test device of a handcart of a high-voltage switch cabinet, and the one-time connection stroke test device is composed of a stroke measurement ruler and a test instrument; the stroke measurement ruler, the test instrument and the high-voltage switch cabinet are combined together, then the stroke of a moving contact of the handcart of the switch cabinet can be intuitively measured by the simple calculation, and the status of the plug-in matching of the moving contact and the static contact of the handcart of the switch cabinet can be judged according to the analysis of the measurement data. The one-time connection stroke test device of the invention has simple structure, low cost and can effectively avoid the fault of the switch cabinet which is caused by that the plug-in of the moving contact of the handcart of the switch cabinet is not in place or the contact is poor, and the measurement task can be completed by only one operator.

The invention discloses a method for calibrating temperature precision of a temperature sensor chip. The method comprises the following steps of: designing and producing the temperature sensor chip, wherein the temperature sensor chip comprises a correction circuit, and a temperature characteristic curve caused by band gap voltage of a semiconductor is shown in the specification: deltaTreal=AT<2>+BT+C; determining symmetric center temperature Talphac; when the temperature sensor chip determines that output temperature is the symmetric center temperature Talphac through a test, adjusting a parameter value C by the correction circuit so as to change a vertex value deltaTreal_1 of the temperature characteristic curve deltaTreal caused by the band gap voltage of the semiconductor in the circuit of the temperature sensor chip; and finally completing calibration of the temperature precision of the temperature sensor chip. By utilizing the invention, the final output temperature precision of the temperature sensor chip can be calibrated only by one temperature test.

The invention discloses a gamma H2AX based cell DNA damage detecting method. The gamma H2AX based cell DNA damage detecting method is characterized by comprising the following technological steps: 1) preparing an experiment reagent; 2) culturing cells; 3) contaminating the cells; 4) determining gamma H2AX in the cells by a flow cytometer; and 5) acquiring a result and analyzing the result. Compared with the prior art, the gamma H2AX based cell DNA damage detecting method has the following characteristics: in the whole testing process, the testing steps of washing cells for multiple times are reduced, so that the operation method is relatively simple and convenient; aiming at the problem of relatively high nonspecific fluorescence interference in an indirect marking method, a direct immune fluorescence marking method is established, so that the detection process is relatively rapid and convenient, and the detection result is relatively stable; according to the invention, the steps of marking a first antibody and a second antibody in an indirect marking method are omitted, the detection cycle is shortened, and the detection efficiency is enhanced. The flow cytometer is used for detecting the relative fluorescence intensity of gamma H2AX, the result is relatively objective and accurate, and the statistic precision is high.

The invention discloses a burning and function testing jig for a skylight control circuit board, the burning and function testing jig comprises a base, wherein the base is used as a bearing structure,at least two sets of burning and testing mechanisms are arranged on the base in parallel, each group of burning and testing mechanism comprises a burning assembly, a testing assembly, an automatic lifting assembly and a burning and testing control module, the burning assembly comprises a carrying plate used for placing the circuit board and a probe used for burning; the testing assembly comprisesa load motor and a magnetic ring, the magnetic ring corresponds to the position of a hall sensor of the circuit board, the automatic lifting assembly is arranged above the burning assembly and comprises an air cylinder and a pressing plate, the carrying plate can be down pressed by the pressing plate via the pressing plate, and the burning and testing control module is respectively electrically connected with the burning assembly, the testing assembly and the automatic lifting assembly, so that the control function is achieved. The burning and function testing jig has the advantages and effects of integrating burning and testing functions, and a multi-channel circuit board automatic simultaneous burning mode is used, so that the production efficiency is improved.

The invention provides a method for synchronously measuring the attenuation coefficient and cut-off wavelength of an optical fiber. A bending reference method or a multi-mode reference method is adopted for measuring the attenuation coefficient and cut-off wavelength of the optical fiber. The bending reference method includes the following steps of measuring the fiber output optical power of the long optical fiber to be tested, cutting out a short optical fiber, measuring the fiber output optical power of the short optical fiber in the status of a small circle and a large circle, releasing the small circle, measuring the fiber output optical power of the short optical fiber only in the status of the large circle, and working out the cut-off wavelength and the attenuation coefficient. The multi-mode reference method includes the following steps of measuring the fiber output optical power of the long optical fiber to be tested, cutting out a short optical fiber, measuring the fiber output optical power of the short optical fiber, calling the existing fiber output optical power of the output end of a multi-mode optical fiber in a system, fitting the transmission power spectrum of the short optical fiber in the status of a large circle, and working out the cut-off wavelength and the attenuation coefficient. The attenuation coefficient and cut-off wavelength of the optical fiber can be simultaneously measured through the bending reference method or the multi-mode reference method, and therefore the number of measuring steps is reduced, measuring time is shortened, and measuring efficiency is effectively improved.

The invention discloses a detection platform for secondary fusion complete equipment, and a control method. The detection platform provided by the invention combines a complete detection system and asecondary detection system to reduce the cumbersome process of the testing process, and is capable of system testing for the secondary fusion complete equipment, and the complete test system and the secondary test system can be simultaneously output. In addition, the detection platform outputs high power and low power through the power source, the set transformer calibrator is compatible with different output characteristics of the electromagnetic transformer and the electronic sensor, and the test instrument needs no replacement during the test for terminals with different acquisition interfaces, obtaining convenient testing.

The invention discloses a portable soil body in-situ density tester which comprises five parts, namely power equipment, soil sampling equipment, a bulldozing structure, a weighing instrument and a base; the power equipment is divided into a lifting device and a pressing device; the pressing device adopts a jack mechanism capable of being inverted; the lifting device is of a small gear structure, and the structure comprises five parts of a transmission gear, a transmission rack, a hand-cranking handle, a transmission rack support and a supporting frame. The portable soil body in-situ density tester has the advantages that the in-situ density of the soil body is measured, the test principle is clear, the structure is simple, the test steps are few, the speed for penetrating into a soil layerfor soil sampling and the lifting speed after sampling can be freely controlled, the soil sampling efficiency is high, and the detection time is shortened; the adopted instrument is small in size, does not need an external power supply and is convenient to carry, the average natural density of the taken soil sample is directly measured, and the taken soil sample is pushed out after the test is finished, so that secondary disturbance of the test is avoided, and the accuracy of a density test result is improved.

he embodiment of the invention, which belongs to the field of the electrical technology, provides a polarity testing method for differential protection of a generator-transformer set. The polarity testing method comprises: a plurality of short-circuit points are set; a gear of a factory transformer is adjusted to be an expected gear, wherein currents obtained from a generator by a factor transformer low-voltage side to a main transformer high-voltage side meet a connecting line polarity testing precision requirement based on the expected gear; the current of the generator is increased by starting with zero and the generator transmits currents to all short-circuit points simultaneously by the main transformer to form corresponding current increasing paths; and protection differential current testing is carried out on all current increasing paths to determine correctness of line connection polarities during the current increasing process of the generator. According to the invention, polarity testing of secondary circuits of all current transformers protected by the generator-transformer set can be completed by short-circuit testing once, so that the test steps and test time are reduced substantially and thus the costs are lowered; the workloads of the operation personnel and the maintenance personnel are reduced; and the test efficiency is improved.

The invention discloses a defect test structure of a semiconductor device, a defect test method and a defect test structure of a before-metal medium layer, wherein the defect test structure of the semiconductor device comprises a semiconductor substrate, n grooves which are arranged on the semiconductor substrate and parallel to one another, and a medium layer filled in the grooves; n is a naturalnumber which is more than or equal to 3; and in a top view of the defect test structure, an inclination angle between a connecting line connecting one end of all grooves and a vertical line of the grooves is beta. Correspondingly, the invention also discloses the defect test method of the semiconductor device and the defect test structure of the before-metal medium layer. The defect test structure and the defect test method have the advantages of saving test steps, improving production efficiency, and facilitating cost reduction.

The invention provides an auxiliary jig for a withstand voltage tester. The auxiliary jig comprises a placing plate, a first current-conducting plate, a second current-conducting plate, a plurality of first current probes, a plurality of second current probes, a plurality of first conductive caps, and a plurality of second conductive caps. The plurality of first current probes are arranged at intervals along the extension direction of the first current-conducting plate. One ends of the plurality of first current probes respectively penetrate through the placing plate to extend into the first current-conducting plate. The number of the first current probes is the same as the number of the first conductive caps. One end of each first current probe, located in the placing plate, is respectively connected with the corresponding first conductive cap. The plurality of second current probes are arranged at intervals along the extension direction of the second current-conducting plate. One ends of the plurality of second current probes respectively penetrate through the placing plate to extend into the second current-conducting plate. The number of the second current probes is the same as the number of the second conductive caps. One end of each second current probe, located in the placing plate, is respectively connected with the corresponding second conductive cap. The auxiliary jig is matched with a clamp for clamping products. By means of the auxiliary jig, users are convenient to take and place products. Meanwhile, test steps are reduced, and the test convenience is guaranteed.

The invention relates to a method for measuring a PN junction of a double-sided cell. The method comprises the steps of: adsorbing a silicon wafer to be measured in vacuum by a graphite tubular electrode, allowing a surface to be measured to be in contact with an electrolytic solution to perform oxidize and generate a silicon dioxide film, monitoring and measuring the thickness of the film in realtime by employing a fiber spectrometer, removing an oxide layer by using a hydrofluoric acid solution, employing four probes to measure the resistivity, repeating the steps of generation of the oxidelayer, the measurement of film thickness, corrosion of the oxide layer and measurement of the resistivity until the resistivity is equal to the resistance of a substrate. The silicon wafer is overturned to repeat the steps mentioned above to achieve measurement of the depth of the PN junction. The measurement method of the depth of the PN junction is suitable for the measurement of the depth of the double-sided cell, and is simple in step, low in cost and accurate in measurement.

The invention provides a multi-channel microscope semiconductor integrated testing system, which is formed by combining an infrared emission microscopy (EMMI) technology, an optical beam induced resistance change (OBIRCH) testing technology, a microprobe detection technology, and a scanning electronic microscopy (SEM) technology. The multi-channel microscope semiconductor integrated testing systemcan effectively perform positioning on defects in a circuit such as holes in a line, holes under a through hole and a high-resistance area at the bottom of a through hole by using an OBIRCH method, and can also effectively detect a short circuit or electric leakage, thereby being a powerful supplement for the emission microscopy technology; and the microprobe detection technology acquires electric parameter values such as operating point voltage, current and a volt-ampere characteristic curve inside an IC quickly and conveniently by a microprobe. The system provided by the invention can perform various failure testing technologies, reduce the test equipment, and is fewer in test step and simple and convenient to operate.

The invention relates to the field of optical communication, and aims to provide a received signal alarm and alarm value removal test algorithm applicable to an optical module, which is characterizedby comprising the following steps of: after accurately measuring an actual measurement alarm value L _ VAL, setting the alarm value D _ VAL to be equal to the actual measurement alarm value L _ VAL-5dBm; adjusting the attenuation amount of the optical attenuator, and enabling the received optical attenuation target value ATT to be equal to the alarm removing value D _ VAL; reading the RX _ LOS pinstate of the tested optical module, and judging whether the optical module is at a low level or not; if the RX _ LOS pin state of the tested optical module is a low level, qualifying the test; and ifthe RX _ LOS pin state of the tested optical module is not the low level, unqualifying the test. The method is suitable for testing the receiving end of the optical module.