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Silicon deep hole etching method

A silicon deep hole and silicon hole technology, applied in the field of microelectronics, can solve problems such as unsatisfactory process results and uneven side walls of the etching section, so as to avoid side wall damage and improve process results.

Active Publication Date: 2019-08-23
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a silicon deep hole etching method, which can solve the defects that the sidewall of the etching section is not smooth and the process result is not ideal

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Embodiment Construction

[0029] In order to enable those skilled in the art to better understand the technical solution of the present invention, the silicon deep hole etching method provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0030] figure 2 A flow chart of a silicon deep hole etching method provided by an embodiment of the present invention. see figure 2 , The silicon deep hole etching method is applied to etching silicon deep holes with a large aspect ratio on the surface of a silicon substrate, especially for etching silicon deep holes with a diameter of less than 5 μm and an aspect ratio greater than 20:1.

[0031] The silicon deep hole etching method comprises the following steps:

[0032] a deposition step for depositing a layer of polymer on the sidewall of the silicon hole;

[0033] The etching transition step is used to discharge the deposition gas and reaction products in the silicon pores;

[0034] an etching st...

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Abstract

The invention provides a silicon deep hole etching method. The silicon deep hole etching method comprises the following steps of a depositing step for depositing a polymer layer on the side wall of the silicon hole, an etching transition step for discharging deposited gas and reaction products out of the silicon hole, an etching step for etching the polymer at the bottom of the silicon hole and deepening the etching depth, and a depositing transition step for discharging etching gas and reaction products out of the silicon hole, wherein the above four steps are implemented circularly until the required total etching depth is achieved. According to the silicon deep hole etching method provided by the invention, the etching section side wall damage caused by air inflow mismatching phenomenon generated in the etching step and the depositing step can be avoided, so that the technological result can be improved.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a silicon deep hole etching method. Background technique [0002] In recent years, as MEMS devices and systems are more and more widely used in the fields of automobiles and consumer electronics, and the broad prospects of TSV (Through Silicon Etch, through hole etching) in the future packaging field, deep silicon etching technology has gradually become One of the hottest processes in the field of MEMS processing and TSV technology. Compared with the general deep silicon etching process [0003] The main difference between the deep silicon etching process and the general silicon etching process is that the etching depth of the deep silicon etching process is much larger than that of the general silicon etching process, and the etching depth of the deep silicon etching process is generally tens of microns It can even reach hundreds of microns, while the etching depth of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768B81C1/00
Inventor 钦华林
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD