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Multi-layer boron nitride based RRAM device and preparation method therefor

A multi-layer boron nitride and boron nitride technology, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of random resistive memory with unstable electrical properties and easy decay, so as to prevent pollution and avoid pollution Effect

Inactive Publication Date: 2016-06-15
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005]Technical problem to be solved: the purpose of this invention is to overcome the problem of unstable electrical properties and easy decay of high dielectric random resistive memory, and introduce advanced two-dimensional materials, Disclosed is an RRAM device based on multilayer boron nitride and its preparation method

Method used

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  • Multi-layer boron nitride based RRAM device and preparation method therefor
  • Multi-layer boron nitride based RRAM device and preparation method therefor
  • Multi-layer boron nitride based RRAM device and preparation method therefor

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Embodiment 1

[0029] (1) Boron nitride is grown by chemical vapor deposition, using borazane as a precursor, annealing the copper foil for 30 minutes in a hydrogen environment of 10 sccm and a low pressure of 1000 ° C, and the growth temperature of boron nitride is kept at 750°C, the time is controlled at 15 minutes, the flow rate of borazane is 3sccm, and the flow rate of hydrogen gas is 2000sccm; after the growth is completed, the boron nitride / copper foil is annealed in 100sccm hydrogen and 100sccm nitrogen environment for 1 hour, and the annealing temperature is 1000°C , that is, the final boron nitride / copper foil sample is obtained, and the substrate copper foil grown on boron nitride is used as the lower electrode of the device;

[0030] (2) Evaporate titanium electrodes and gold electrodes using an electron beam evaporation apparatus and a mask plate: slowly increase the electron beam power, the metal begins to evaporate, then increase the electron beam power until it reaches 0.5? / s ...

Embodiment 2

[0034] (1) Boron nitride is grown by chemical vapor deposition, using borazane as a precursor, annealing the copper foil for 30 minutes in a hydrogen environment of 10 sccm and a low pressure of 1000 ° C, and the growth temperature of boron nitride is kept at 750°C, the time is controlled at 15 minutes, the flow rate of borazane is 3 sccm, and the flow rate of hydrogen gas is 2000 sccm; after the growth is completed, the boron nitride / copper foil is annealed in an environment of 100 sccm hydrogen and 100 sccm nitrogen for 1 hour, and the annealing temperature is 1000 °C , that is, the final boron nitride / copper foil sample is obtained, and the substrate copper foil grown on boron nitride is used as the lower electrode of the device;

[0035] (2) Evaporate titanium electrodes and gold electrodes using an electron beam evaporation apparatus and a mask: slowly increase the electron beam power, and the metal begins to evaporate, then increase the electron beam power until it reache...

Embodiment 3

[0037] (1) Boron nitride is grown by chemical vapor deposition, using borazane as a precursor, annealing the copper foil for 30 minutes in a hydrogen environment of 10 sccm and a low pressure of 1000 ° C, and the growth temperature of boron nitride is kept at 750°C, the time is controlled at 15 minutes, the flow rate of borazane is 3 sccm, and the flow rate of hydrogen gas is 2000 sccm; after the growth is completed, the boron nitride / copper foil is annealed in an environment of 100 sccm hydrogen and 100 sccm nitrogen for 1 hour, and the annealing temperature is 1000 °C , that is, the final boron nitride / copper foil sample is obtained, and the substrate copper foil grown on boron nitride is used as the lower electrode of the device;

[0038] (2) Evaporate titanium electrodes and gold electrodes using an electron beam evaporation apparatus and a mask: slowly increase the electron beam power, and the metal begins to evaporate, then increase the electron beam power until it reache...

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Abstract

The invention discloses a multi-layer boron nitride based RRAM device and a preparation method therefor. The RRAM device comprises a dielectric layer, a lower electrode and an upper electrode, wherein the dielectric layer adopts the multi-layer boron nitride; the lower electrode is a copper foil; the upper electrode adopts titanium alloy; the preparation method comprises the steps of (1) growing boron nitride by a chemical vapor deposition method to obtain a final boron nitride / copper foil sample, andthe substrate copper coil for growing the boron nitride is taken as the lower electrode of the device; and (2) performing evaporation on a titanium electrode and a gold electrode by an electronic beam evaporation instrument and a mask plate. Compared with the popular high-dielectric-material hafnium oxide device, the RRAM device provided by the invention is stable in electrical property; the device has simple preparation method, and contamination to samples caused by the common transfer ways of two-dimensional materials is avoided; the upper electrode is evaporated directly by using the mask plate, so that micro-machining means, such as photoetching are avoided; and therefore, the multi-layer boron nitride based RRAM device is suitable for industrial large-scale production and bright in prospects.

Description

technical field [0001] The invention belongs to the field of information storage materials, and relates to a multilayer boron nitride-based RRAM device and a preparation method thereof. Background technique [0002] Electronic information storage has become the mainstream demand in modern society, among which, flash memory is the most widely used due to its advantages of simple structure, high integration and fast speed. The heart of the device is based on charging and discharging a capacitor, with a sensor acting as a switch. However, this structure suffers from many physical defects as the device scales down. Therefore, a new method of storing information is urgently needed, and among non-volatile memories, random resistive memory (RRAM) has attracted great attention in recent years. [0003] The core of the RRAM is a metal-insulator-metal (MIM) structure, which can be prepared by conventional microelectronic equipment such as electron beam evaporation, sputtering, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L45/00
CPCH10B63/00H10N70/00
Inventor 吉艳凤潘成斌惠飞石媛媛肖娜马里奥兰扎
Owner SUZHOU UNIV
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