A photoelectric sensor based on silicon quantum dots/graphene/silicon heterostructure
A photoelectric sensor, silicon quantum dot technology, applied in nanotechnology, circuits, electrical components, etc. for materials and surface science, can solve problems affecting the high frequency performance of p-n junctions, achieve a promising market prospect, and improve responsivity , the effect of high mechanical strength
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[0015] refer to figure 1 with figure 2 , the present invention is based on the photoelectric sensor of silicon quantum dot / graphene / silicon heterogeneous structure, has bottom electrode 7, n-type silicon substrate 1, silicon dioxide isolation layer 2 successively from bottom to top, and described silicon dioxide isolation layer There is a window 3 on the 2, and a top electrode 4 is arranged on the upper surface of the silicon dioxide isolation layer. The top electrode 4 is covered with a single-layer graphene 5 and a silicon quantum dot film 6. Type silicon substrate contact forms graphene / silicon Schottky junction, the boundary of top electrode 4 is smaller than the boundary of silicon dioxide spacer layer 2, and the boundary of single-layer graphene 5 and silicon quantum dotene film layer 6 is all smaller than that of top electrode 4. outer border.
[0016] Wherein, the n-type silicon substrate adopts n-type silicon with a thickness of 300-500 μm and a resistivity of 1-10...
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