LED epitaxial structure with warpage-adjusting structural layer and growth method thereof

Abstract

An LED epitaxial structure with a warpage-adjusting structure layer and its growth method, the warp-adjusting structure layer is inserted between the high-temperature GaN layer and the high-temperature N-type GaN layer of the LED, and the structure is Si3N4 / GaN / AlGaN / GaN supercrystal lattice layer, the number of structural periods is 1-40, the thickness of a single period is 31-1930nm, the growth temperature is 700-1200°C, and the growth pressure is 50-300torr. The growth conditions of the Si3N4 layer and the AlGaN layer can be the same or different. When the Si3N4 layer When the growth conditions of the AlGaN layer are different, the transition conditions of the intermediate GaN layer are changed, and then the thickness of the Si3N4 layer and the flow rate of SiH4, the thickness of the AlGaN layer and the composition of Al are adjusted to cooperate to adjust the degree of warpage during the growth of the epitaxial wafer. In this way, the uniformity of internal parameters of LED epitaxial wafer products can be improved, and the yield rate of LED epitaxial wafers can be improved.

Description

technical field [0001] The invention relates to an epitaxial structure growth method of an LED (light emitting diode) for adjusting growth warpage degree and improving product yield, and belongs to the technical field of LED preparation. Background technique [0002] Wide bandgap semiconductors are the third-generation semiconductor materials after silicon and gallium arsenide. In recent years, people have paid more and more attention to them. At present, extensive research mainly includes III-V and II-VI compound semiconductor materials, silicon carbide (SiC) and diamond thin films, etc., have been widely used in blue-green, ultraviolet LEDs, LDs, detectors, and microwave power devices. Due to its excellent properties and wide range of applications, it has received extensive attention. In particular, gallium nitride (GaN) material among III-V semiconductor materials has become a research hotspot in the global semiconductor field due to its commercial application in semicon...

AI Technical Summary

Problems solved by technology

This method cannot effectively adjust the warpage of the epitaxial wafer before MQW, and inserting a transition layer between the high-temperature N-type GaN and the light-emitting region will greatly affect the performance of LED products

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