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LED epitaxial structure with warpage-adjusting structural layer and growth method thereof

A technology to adjust the structure and epitaxial structure, which is applied in the manufacture of semiconductor devices, electrical components, semiconductor/solid-state devices, etc. It can solve the problems that the degree of warping of epitaxial wafers cannot be adjusted effectively and affect the performance of LED products, so as to improve the uniformity of growth conditions , improve the yield rate, and improve the effect of parameter uniformity

Active Publication Date: 2018-11-30
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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Problems solved by technology

This method cannot effectively adjust the warpage of the epitaxial wafer before MQW, and inserting a transition layer between the high-temperature N-type GaN and the light-emitting region will greatly affect the performance of LED products

Method used

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  • LED epitaxial structure with warpage-adjusting structural layer and growth method thereof
  • LED epitaxial structure with warpage-adjusting structural layer and growth method thereof

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Embodiment Construction

[0033] Such as figure 1 As shown, the present invention has an LED epitaxial structure with a warpage-adjusting structural layer, which includes a sapphire substrate 1, a nucleation layer 2, a roughening layer 3, a high-temperature GaN layer 4, a warpage-adjusting structural layer 5, and a high-temperature The N-type GaN layer 6 , the light emitting layer 7 , the P-type AlGaN layer 8 and the P-type GaN layer 9 , and the warp adjustment structure layer 5 is arranged between the high-temperature GaN layer 4 and the high-temperature N-type GaN layer 6 . Such as figure 2 As shown, the warpage adjustment structure layer 5 is Si 3 N 4 The superlattice layer of the layer 51, the first GaN layer 52, the AlGaN layer 53 and the second GaN layer 54 has a period number of 1-40 and a single period thickness of 31-1930nm.

[0034] The growth temperature of the warpage regulating structure layer 5 is 700-1200° C., and the growth pressure is 50-300 torr, wherein Si 3 N 4 layer and AlGaN...

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Abstract

An LED epitaxial structure with a warpage-adjusting structure layer and its growth method, the warp-adjusting structure layer is inserted between the high-temperature GaN layer and the high-temperature N-type GaN layer of the LED, and the structure is Si3N4 / GaN / AlGaN / GaN supercrystal lattice layer, the number of structural periods is 1-40, the thickness of a single period is 31-1930nm, the growth temperature is 700-1200°C, and the growth pressure is 50-300torr. The growth conditions of the Si3N4 layer and the AlGaN layer can be the same or different. When the Si3N4 layer When the growth conditions of the AlGaN layer are different, the transition conditions of the intermediate GaN layer are changed, and then the thickness of the Si3N4 layer and the flow rate of SiH4, the thickness of the AlGaN layer and the composition of Al are adjusted to cooperate to adjust the degree of warpage during the growth of the epitaxial wafer. In this way, the uniformity of internal parameters of LED epitaxial wafer products can be improved, and the yield rate of LED epitaxial wafers can be improved.

Description

technical field [0001] The invention relates to an epitaxial structure growth method of an LED (light emitting diode) for adjusting growth warpage degree and improving product yield, and belongs to the technical field of LED preparation. Background technique [0002] Wide bandgap semiconductors are the third-generation semiconductor materials after silicon and gallium arsenide. In recent years, people have paid more and more attention to them. At present, extensive research mainly includes III-V and II-VI compound semiconductor materials, silicon carbide (SiC) and diamond thin films, etc., have been widely used in blue-green, ultraviolet LEDs, LDs, detectors, and microwave power devices. Due to its excellent properties and wide range of applications, it has received extensive attention. In particular, gallium nitride (GaN) material among III-V semiconductor materials has become a research hotspot in the global semiconductor field due to its commercial application in semicon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/12H01L33/04H01L33/00H01L21/02
CPCH01L21/0242H01L21/02458H01L21/02488H01L21/02507H01L21/0254H01L21/0262H01L33/0066H01L33/0075H01L33/04H01L33/12
Inventor 马旺王承军曲爽王成新徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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