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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as no solution and difficult conduction of the antifuse structure

Active Publication Date: 2016-06-29
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the programming voltage of the above-mentioned antifuse structure is much larger than the operating voltage of the semiconductor device
For example, when the thickness of the gate oxide layer in the antifuse structure is 3.5nm, a programming voltage greater than 5V is required to break down the gate oxide layer, while the normal operating voltage is only about 3.3V, resulting in the antifuse structure Difficult to conduct at operating voltage
For the above problems, there is currently no effective solution

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0028] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

[0029] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural, and it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, they mean There are features, steps, operations, means, components and / or combinations thereof.

[0030] For the convenience of description, spatially relative terms may be used here, such as "on ...", "over ...", "on the surface of ...", "above", etc., to describe...

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Abstract

The application discloses a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a substrate including a first region and a second region; a recess disposed on a surface of the second region; a functional part disposed on the first region; and an antifuse structure disposed on the second region , wherein the antifuse structure includes a conductive component and an insulating component, and the insulating component covers the recess and part of the second region. In this semiconductor device, since the insulating member covers the recessed portion, the lower surface of the insulating member has a raised portion corresponding to the recessed portion, and when a voltage is applied to the antifuse structure, a high electric field is generated near the raised portion. The strong electric field makes the insulating part break down at a lower voltage, which reduces the programming voltage of the antifuse structure, so that the antifuse structure in the semiconductor device is easier to conduct under the working voltage.

Description

technical field [0001] The present application relates to the technical field of manufacturing semiconductor integrated circuits, and in particular, relates to a semiconductor device and a manufacturing method thereof. Background technique [0002] An antifuse is a commonly used component in semiconductor devices, and it is widely used in programmable integrated circuits (ICs). The antifuse structure usually includes two conductors and an insulating layer formed between the two conductors. Its working principle is: when no voltage is applied to the antifuse structure, the insulating layer does not conduct electricity; when the antifuse structure When a sufficiently high voltage is applied to the semiconductor device, the insulating layer is broken down to be in a conductive state, and the antifuse structure is turned on. At this time, the voltage applied to the semiconductor device and turned on by the antifuse structure is called the programming voltage. [0003] At presen...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L21/8238
Inventor 李敏何学缅
Owner SEMICON MFG INT (SHANGHAI) CORP
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