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Systems, methods and apparatus for post-chemical mechanical planarization substrate buff pre-cleaning

A pre-cleaning, substrate technology, applied in the direction of cleaning methods using tools, cleaning methods and utensils, chemical instruments and methods, etc.

Active Publication Date: 2016-06-29
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, some particles and residues that remain after CMP may be difficult to remove using conventional cleaning methods such as brush box washing, megasonic bath immersion, etc.

Method used

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  • Systems, methods and apparatus for post-chemical mechanical planarization substrate buff pre-cleaning
  • Systems, methods and apparatus for post-chemical mechanical planarization substrate buff pre-cleaning
  • Systems, methods and apparatus for post-chemical mechanical planarization substrate buff pre-cleaning

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example 1

[0064] In some embodiments, the pressure applied to bellows 414 and / or polishing pad 208 during grinding may range from about 0.1 psi (pounds per square inch) to 4 psi. Example pressure accuracy may be about + / - 4% of full scale, while example pressure response times range from less than about 0.5 seconds to less than about 2 seconds. Other pressures, pressure accuracies and / or pressure response times may be used.

[0065] In some embodiments, polishing pad 208 may be formed from polyurethane, silicone, polyvinyl alcohol, or similar materials. Exemplary polishing pads range in diameter from about 20-80 millimeters and have a thickness of about 3.75 to about 6.25 millimeters. Example polishing pad spin rates range from 0 to 3000 rpm + / - 4% full scale. Other polishing pad materials, sizes and / or spin rates may be used.

[0066] In some embodiments, the swing arm 106 may allow a sweep range (on the substrate) of approximately 0 to 200 mm, + / - 4% full scale. Example sweep spee...

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Abstract

In some embodiments, an apparatus for cleaning a substrate is provided that includes (1) a substrate chuck configured to support a substrate with a front side of the substrate accessible; (2) a buff pad assembly configured to support a buff pad having a diameter smaller than a diameter of the substrate; and (3) a swing arm coupled to the buff pad and configured to position and rotate the buff pad along the front side of the substrate, and control an amount of force applied by the buff pad against the front side of the substrate during cleaning. The substrate chuck, buff pad assembly and swing arm are configured to buff clean the substrate. Numerous additional aspects are disclosed.

Description

[0001] This application claims priority to U.S. Provisional Patent Application No. 61 / 895,527, filed October 25, 2013, and U.S. Provisional Patent Application No. 61 / 909,973, filed November 27, 2013, each of which is a provisional Both patent applications are hereby incorporated by reference in their entirety. technical field [0002] Embodiments of the present invention generally relate to electronic device fabrication including chemical mechanical planarization (chemical mechanical polishing, CMP), and in particular to methods and apparatus for post-CMP polishing pre-cleaning of substrates. Background technique [0003] After performing a chemical mechanical planarization (CMP) process on the substrate, the substrate is typically cleaned to remove unwanted debris and particles from the substrate. For example, slurry, ground substrate material, or other residues may adhere to the substrate, including the beveled edge of the substrate. [0004] After CMP, the substrate may ...

Claims

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Application Information

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IPC IPC(8): B24B37/34B24B37/04B25J15/00
CPCH01L21/67046B08B1/32B24B37/04B24B37/34H01L21/02041H01L21/304H01L21/30625B08B1/143
Inventor C·P·萨卡塔H·陈J·K·阿特金森B·J·布朗J·唐Y·陈Y·丁
Owner APPLIED MATERIALS INC
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