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Coating compositions for use with overcoated photoresists

A technology of coating composition and photoresist, which is applied in the field of anti-reflection coating composition, planarization or via filling composition, and can solve problems such as pattern collapse and reduced depth of focus

Active Publication Date: 2022-07-19
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using a thicker resist layer may not be a practical solution as it would then lead to other problems such as reduced depth of focus and pattern collapse

Method used

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  • Coating compositions for use with overcoated photoresists
  • Coating compositions for use with overcoated photoresists
  • Coating compositions for use with overcoated photoresists

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0112] Example 1: Synthesis of Matrix Polymer 1

[0113] The polymer referred to herein as "Matrix Polymer 1" or simply "Polymer 1" was prepared in the following manner. 14g of 3,3'-(5-(2-(tert-butoxy)-2-oxoethyl)-2,4,6-trioxo-1,3,5-triazine-1,3-di base) dibutyl dipropionate, 27 g of tris-(2-hydroxyethyl) isocyanurate, a catalytic amount of p-toluenesulfonic acid monohydrate and 33 g of anisole were fed into the reactor. The reaction was heated and refluxed. After the reaction was completed, the reaction solution was cooled and diluted. The solution was added to a sufficient amount of alcoholic solvent and collected by filtration in a Buchner funnel, air dried and then dried in vacuo. The weight average molecular weight of the resulting polymer was 9000 for standard polystyrene.

example 2

[0114] Example 2: Synthesis of Matrix Polymer 2

[0115] The polymer referred to herein as "Matrix Polymer 2" or simply "Polymer 2" was prepared in the following manner. 17 g of tris-(2-carboxyethyl) isocyanurate, 23 g of tris-(2-hydroxyethyl) isocyanurate, a catalytic amount of p-toluenesulfonic acid monohydrate and 33 g of anisole were fed into the reactor middle. After the reaction was completed, the reaction solution was cooled and diluted. The polymer was precipitated by dropwise addition of a sufficient amount of isopropanol and collected by filtration in a Buchner funnel, air dried and then dried in vacuo. The weight average molecular weight of the resulting polymer was 7000 for standard polystyrene.

example 3

[0116] Example 3: Synthesis of Matrix Polymer 3

[0117] The polymer referred to herein as "Matrix Polymer 3" or simply "Polymer 3" was prepared in the following manner. 15g of N-allyl-bis(2-carboxyethyl) isocyanurate, 27g of tris-(2-hydroxyethyl) isocyanurate, and a catalytic amount of p-toluenesulfonic acid acid monohydrate, PTSA) and 30 g of anisole were fed into the reactor. After the reaction was completed, the reaction solution was cooled and diluted. The polymer was precipitated by dropwise addition of a sufficient amount of alcoholic solvent and collected by filtration in a Buchner funnel, air dried and then dried in vacuo. The weight average molecular weight of the resulting polymer was 19,000 for standard polystyrene.

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Abstract

Organic coating compositions, especially antireflective coating compositions for use with overcoated photoresists, are provided comprising a surfactant comprising formula (I). wherein A and B are each independently hydrogen, optionally substituted alkyl, or optionally substituted aryl; and X and Y are each independently hydrogen, optionally substituted alkyl, or optionally substituted substituted carbocyclic aryl; and n is a positive integer. Preferred coating compositions can improve the pattern collapse limit of overcoated photoresist layers.

Description

Background technique [0001] The present invention relates to compositions for microelectronic applications, and in particular antireflective coating compositions (eg, "BARC"). The compositions of the present invention contain a surface energy control agent. [0002] Photoresists are photosensitive films used to transfer images to substrates. A coating of photoresist is formed on the substrate, and then the photoresist layer is exposed to a source of activating radiation through a photomask. After exposure, the photoresist is developed to provide a relief image that allows selective processing of the substrate. [0003] Reflection of the activating radiation used to expose the photoresist often limits the resolution of images patterned in the photoresist layer. Reflection of radiation from the substrate / photoresist interface can spatially vary the radiation intensity in the photoresist, resulting in non-uniform linewidths of the photoresist during development. Radiation can...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00G03F7/004
CPCG03F7/002G03F7/004G03F7/0397G03F7/11G03F7/325A41D15/04A41D3/04A41D27/22A45F4/00A45F4/14A47G9/062A47G9/086A41D2300/324A41D2300/33
Inventor S-J·李J·姜D-J·洪
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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