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A Method for Restraining Quality Factor Drift of Integrated Passive Devices

A technology that integrates passive devices and quality factors. It is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as increasing the area percentage of passive components.

Active Publication Date: 2018-09-07
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with active components, the size of passive components on integrated circuits may not be reduced, because it is necessary to consider whether the quality factor of miniaturized passive devices meets the specifications, and whether the loss of input signals can be limited to a reliable range. Therefore, Integrated circuits formed with advanced technology may require an increased area percentage of passive components on the integrated circuit

Method used

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  • A Method for Restraining Quality Factor Drift of Integrated Passive Devices
  • A Method for Restraining Quality Factor Drift of Integrated Passive Devices
  • A Method for Restraining Quality Factor Drift of Integrated Passive Devices

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Embodiment Construction

[0025] figure 1 It shows the general correspondence between the substrate resistivity of the integrated passive device (Integrated Passive Device, referred to as IPD), the quality factor Q, and the signal frequency input to the integrated passive device. The integrated passive device is deliberately specified at 1.5Ghz The data measured under the conditions, in order to better understand the spirit of the invention of the present invention, after first introducing the embodiment of the present invention and explaining in detail the integrated passive device structure that obtains, further to figure 1 The data shown were analyzed.

[0026] exist figure 2 Among them, the substrate 100 is used to prepare the base of the integrated passive device. In order to ensure the higher performance of the integrated passive device, especially the quality factor conforms to the specification, in some embodiments, the substrate 100 is generally required to be P- type, and the resistivity i...

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Abstract

The invention relates to a method for preventing the negative drift of a quality factor of an integrated passive device. The method comprises the steps: implanting ions of a preset element in a substrate; carrying out the thermal treatment of the substrate; separating out oxygen precipitation from the interstitial oxygen in the substrate through the ions; carrying out the synchronization reaction of the ions and the interstitial oxygen, and generating a silicon dioxide composite body of the element, thereby reducing the concentration of the interstitial oxygen in the substrate, forming an insulating layer on the top surface of the substrate, and preparing the integrated passive device on the insulating layer.

Description

technical field [0001] The present invention relates to the field of semiconductor devices, and more precisely, the present invention aims to provide a method for preventing negative drift of device quality factors in integrated passive devices with resistors, inductors and capacitors. Background technique [0002] Passive devices are widely used in the prior art, especially passive devices are essential in radio frequency circuits, and the miniaturization of passive devices or circuits with passive devices is one of the parameters for evaluating radio frequency technology. Moreover, passive devices Another performance parameter of the device is the quality factor (Quality-factor). Generally speaking, the larger the quality factor of the device, the better the performance it reflects. [0003] In the prior art, discrete inductors and capacitors are often made on the PCB to achieve matching, which can greatly reduce the cost but cannot meet the trend of miniaturized equipment...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
Inventor 陈林杜海
Owner SEMICON MFG INT (SHANGHAI) CORP