Radio-frequency switching device and forming method thereof
A technology of radio frequency switches and devices, which is applied in the direction of semiconductor devices, semiconductor/solid state device manufacturing, electrical components, etc., can solve the problems that the performance of radio frequency switch devices needs to be improved, and achieve the effect of reducing the equivalent off-state capacitance and enhancing the isolation performance
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no. 1 example
[0036] image 3 , Figure 4 and Figure 5 is a schematic diagram of the radio frequency switching device in the first embodiment of the present invention, wherein, image 3 It is a top view of the radio frequency switching device in the first embodiment of the present invention, Figure 4 for along image 3 Sectional view obtained by cutting line A1-A2.
[0037] combined reference image 3 and Figure 4 , The radio frequency switching device includes: a substrate 200; a gate structure G021 located on the substrate 200; a source region and a drain region respectively located in the substrate on both sides of the gate structure G021; a source metal layer S021 located on the substrate 200, the source metal layer S021 is correspondingly connected to the source region; the drain metal layer D021 is located on the substrate 200, the drain metal layer D021 is correspondingly connected to the drain region, and the source metal layer S021 is And the drain metal layer D021 has a di...
no. 2 example
[0068] The difference between the second embodiment and the first embodiment is that the metal layer is projected onto the top surface of part of the source metal layer and part of the drain metal layer. In this embodiment, a case where the metal layer is projected onto the top surfaces of part of the source metal layer and part of the drain metal layer is exemplified. The parts of the second embodiment that are the same as those of the first embodiment will not be described in detail again.
[0069] Figure 6 and Figure 7 is a schematic diagram of the radio frequency switching device in the second embodiment of the present invention, wherein, Figure 6 It is a top view of the radio frequency switching device in the second embodiment of the present invention, Figure 7 for along Figure 6 Sectional view obtained by cutting line A2-A3.
[0070] combined reference Figure 6 and Figure 7, The radio frequency switching device includes: a substrate 300; a gate structure G0...
no. 3 example
[0087] The difference between the third embodiment and the second embodiment is that the metal layer is a comb structure. The parts of the third embodiment that are the same as those of the second embodiment will not be described in detail.
[0088] Figure 8 , Figure 9 and Figure 10 It is a schematic diagram of the radio frequency switching device in the third embodiment of the present invention, wherein, Figure 8 , Figure 10 is a top view of the radio frequency switching device in the third embodiment, Figure 9 for Figure 8 The three-dimensional schematic diagram corresponding to the middle metal layer.
[0089] When the metal layer has a comb structure, the metal layer includes comb teeth of the metal layer and a comb handle of the metal layer, the comb teeth of the metal layer are located on one side of the comb handle of the metal layer, and the metal layer The extension direction of the comb handle of the layer is perpendicular to the extension direction of ...
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