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a kind of sb 2 te 3 Thermoelectric material film wet etching method

A material thin film, wet etching technology, used in the manufacture/processing of thermoelectric devices, circuits, electrical components, etc., to achieve the effects of high etching accuracy, controllable etching rate, and clear appearance

Active Publication Date: 2018-01-12
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

However, in the existing technology, there is no target for Sb 2 Te 3 Wet etching method of thermoelectric material film

Method used

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  • a kind of sb <sub>2</sub> te <sub>3</sub> Thermoelectric material film wet etching method
  • a kind of sb <sub>2</sub> te <sub>3</sub> Thermoelectric material film wet etching method
  • a kind of sb <sub>2</sub> te <sub>3</sub> Thermoelectric material film wet etching method

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Embodiment Construction

[0018] The specific embodiment of the present invention will be described in further detail below in conjunction with the accompanying drawings.

[0019] Such as figure 1 As shown, a Sb 2 Te 3 The method for wet etching of a thermoelectric material thin film comprises steps:

[0020] (a), a layer of Sb was coated on the glass substrate by magnetron sputtering. 2 Te 3 Thin films of thermoelectric materials with a film thickness of 80nm;

[0021] (b), using a laser with a wavelength of 405nm to the Sb 2 Te 3 Direct-write exposure thermal action of thermoelectric material thin film, Sb before and after laser exposure thermal action 2 Te 3 The XRD pattern of the film is as figure 2 As shown in the figure, we can know that the area after laser direct writing exposure heat has undergone a transformation from amorphous state to crystalline state;

[0022] (c), using NaOH solution with a molar concentration of 0.1mol / L to treat Sb after laser exposure heat 2 Te 3 The film...

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Abstract

The invention discloses a Sb 2 Te 3 The thermoelectric material film wet etching method comprises the following steps: coating a layer of Sb on a glass substrate by means of magnetron sputtering 2 Te 3 Thin films of thermoelectric materials; Sb prepared by laser 2 Te 3 The thermoelectric material film is subjected to direct-writing laser exposure thermal action; the etching solution is used to perform selective wet etching on the thin film subjected to laser thermal action. The wet etching method of the invention has the advantages of simple operation, low cost, controllable etching rate, high etching precision and the like. The wet etching method can be used for Sb in the fields of micro-nano structure manufacturing, thermal sensors, thermoelectric cooling devices, solar cells, phase change memories, etc. 2 Te 3 The micro-nano graphic structure processing technology promotes the application of the thermoelectric thin film in the above-mentioned fields.

Description

technical field [0001] The present invention relates to a kind of Sb 2 Te 3 Wet etching method for thin film of thermoelectric material. Background technique [0002] Sb 2 Te 3 Thermoelectric material film is a narrow-band semiconductor film with excellent room temperature thermoelectric properties. It has long been recognized as one of the best thermoelectric materials. At present, most thermoelectric cooling elements use this material. It is used in thermoelectric refrigeration and thermoelectric power generation. It has broad application prospects. At the same time, Sb 2 Te 3 It is also a typical phase change material, which has important applications in the field of phase change memory and micro-nano structure manufacturing. However, in the existing technology, there is no target for Sb 2 Te 3 Wet etching method for thin films of thermoelectric materials. Therefore, the development of a high-precision wet etching process for Sb 2 Te 3 The application and indu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/34H01L21/465
CPCH01L21/465H10N10/01
Inventor 周奇军魏劲松魏涛
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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