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A semiconductor detector

A semiconductor and detector technology, applied in the field of detectors, can solve the problems affecting the energy resolution of CdZnTe semiconductor detectors, the fluctuation of output signal amplitude, etc., and achieve the effects of reducing the possibility, increasing the average electric field strength, and shortening the drift time

Active Publication Date: 2019-01-18
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, moving electrons will also be trapped by defects in the CdZnTe semiconductor crystal, especially when the electric field strength is low and the drift time is long, the electrons are trapped more significantly, which leads to the output signal of the collecting electrode of the CdZnTe semiconductor detector Amplitude fluctuations, which affect the energy resolution of CdZnTe semiconductor detectors

Method used

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  • A semiconductor detector
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Experimental program
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Embodiment 1

[0058] Such as figure 1 As shown, the semiconductor detector 100 provided in this embodiment includes a semiconductor crystal 101 , a cathode 102 , an anode 103 , a first step electrode 104 and a second step electrode 105 .

[0059] In this embodiment, the shape of the semiconductor crystal 101 is, for example, a cuboid. The material of the semiconductor crystal 101 includes HgI 2 , GaAs, TiBr, CdTe, CdZnTe, CdSe, GaP, HgS, PbI 2 or AlSb.

[0060] In this embodiment, the cathode 102 , the anode 103 , the first stepped electrode 104 and the second stepped electrode 105 are all conductive films deposited on the surface of the semiconductor crystal 101 . The materials of the cathode 102 , the anode 103 , the first stepped electrode 104 and the second stepped electrode 105 include Au, Pt, Ag, Cu, Al or ITO. The cathode 102 is disposed on the bottom surface 101 - 1 of the semiconductor crystal 101 and covers the entire area of ​​the bottom surface 101 - 1 of the semiconductor c...

Embodiment 2

[0066] Such as image 3 As shown, the difference between the semiconductor detector 100 provided in this embodiment and Embodiment 1 is that the cathode 102 includes a plurality of rectangular sub-electrodes arranged on the bottom surface 101-1, and any two adjacent sub-electrodes are arranged between There is a gap, and the long side of each sub-electrode of the cathode 102 is parallel to the long side of the anode 103 . Each sub-electrode of the cathode 102 may be unevenly disposed on the bottom surface 101-1. Preferably, each sub-electrode of the cathode 102 is uniformly disposed on the bottom surface 101-1. The widths of the respective sub-electrodes of the cathode 102 may be different. Preferably, each sub-electrode of the cathode 102 has the same width. All the other are identical with embodiment 1.

Embodiment 3

[0068] Such as Figure 4As shown, the difference between the semiconductor detector 100 provided in this embodiment and Embodiment 1 is that the cathode 102 includes a plurality of rectangular sub-electrodes arranged on the bottom surface 101-1, and any two adjacent sub-electrodes are arranged between There is a gap, and the long side of each sub-electrode of the cathode 102 is perpendicular to the long side of the anode 103 . Each sub-electrode of the cathode 102 may be unevenly disposed on the bottom surface 101-1. Preferably, each sub-electrode of the cathode 102 is uniformly disposed on the bottom surface 101-1. The widths of the respective sub-electrodes of the cathode 102 may be different. Preferably, each sub-electrode of the cathode 102 has the same width. All the other are identical with embodiment 1.

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Abstract

The invention provides a semiconductor detector comprising a semiconductor crystal, a cathode, an anode, and at least one step electrode. The semiconductor crystal comprises a top surface, a bottom surface, and at least one side surface. The cathode, the anode, and the step electrode are all conductive films deposited on the surface of the semiconductor crystal. The cathode is disposed on the bottom surface of the semiconductor crystal. The anode is arranged on the top surface of the semiconductor crystal. The step electrode is arranged on at least one side surface of the semiconductor crystal and comprises multiple sub electrodes. The semiconductor detector may increase energy resolution.

Description

[0001] This case is a divisional case with application number 201310149397.6. technical field [0002] The invention relates to the technical field of detectors, in particular to a semiconductor detector. Background technique [0003] Using a detector to measure the energy spectrum of high-energy rays such as X-rays or γ-rays is one of the important means for nuclide identification. This kind of detector has been widely used in the fields of nuclear radiation protection, nuclear security inspection, environmental protection and homeland security to detect radioactive substances. In the prior art, such detectors are mainly divided into two categories: one is a scintillator detector represented by NaI(Tl), and the other is a semiconductor detector represented by high-purity germanium (HPGe). [0004] Scintillator detectors have the advantages of simple preparation and low cost. Portable gamma spectrometers used at the detection site are usually NaI or CsI scintillator detect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T1/36
CPCG01T1/366
Inventor 李元景张岚李玉兰刘以农傅楗强江灏邓智薛涛张韡李军
Owner TSINGHUA UNIV