Epitaxial wafer growth apparatus

Abstract

The present invention relates to an epitaxial wafer growth apparatus for growing an epitaxial layer according to a flow of a process gas. The epitaxial wafer growth apparatus comprises: a reaction chamber for providing a region in which the process gas flows; an upper liner and a lower liner surrounding side surfaces of the reaction chamber; a susceptor arranged at the center of the reaction chamber such that a wafer is disposed on the susceptor; a preheating ring arranged to be coplanar with the susceptor and provided on an upper surface of the lower liner so as to be spaced apart from the susceptor; and a fixing member provided below the preheating ring so as to come into contact with a side surface of the lower liner, wherein the fixing member includes a protrusion having a contact surface in a circumferential direction with the side surface of the lower liner, and the protrusion is fixed so as to allow the preheating ring and the susceptor to have a predetermined space therebetween. Accordingly, the preheating ring provided on the lower liner is fixed so as to maintain a predetermined distance from the susceptor in all directions during an epitaxial growth process, thereby enabling a reaction gas flowing toward the wafer to be controlled in a constant manner to form a uniform epitaxial thickness at an edge of the wafer.

Description

technical field [0001] The present invention relates to an epitaxial growth device, and more particularly, to an epitaxial growth device for growing a single crystal silicon epitaxial thin layer on a wafer. Background technique [0002] Epitaxial silicon wafer refers to a thin epitaxial layer of single crystal silicon grown on a mirror-polished silicon wafer. For the formation of an epitaxial silicon wafer, a mirror-polished silicon wafer is mounted on a susceptor in an epitaxial reactor, and then, a source gas is supplied from one side end of the reactor to the other side end. Thereby, the gas reacts with the wafer to form a grown epitaxial layer on the surface of said wafer. [0003] figure 1 A cross-sectional view of a conventional epitaxial reactor is shown. refer to figure 1 , the lower gasket 102 is arranged on the outer peripheral surface of the reaction vessel 101 , and the base 105 is arranged inside the reaction vessel 101 and adjacent to the lower gasket 102 i...

AI Technical Summary

Problems solved by technology

This can further contaminate the reaction gas in the reaction vessel 101

This can deteriorate the quality of the resulting epitaxial wafers, and thus reduce the yield of epitaxial wafers

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