Method and system for erasing and writing control of nvm memory based on heterogeneous hybrid memory

Abstract

The invention provides a NVM erasing and writing control method based on a heterogeneous hybrid memory. The method comprises the following steps of: obtaining a NVM page erasing and writing time recording table, wherein the page serial number of a NVM and the corresponding erasing and writing time are recorded in the NVM page erasing and writing time recording table; according to the NVM page erasing and writing time recording table, operating the erasing and writing time corresponding to the page serial number of the NVM by adopting a balancing algorithm so as to obtain the operation value of the erasing and writing time; and writing data in the NVM according to the page of the NVM, the page serial number of which is the operation value. Because the balancing algorithm can ensure that the selection times of all pages of the NVM are relatively random and average, the erasing and writing times of different storage units of the NVM are controlled; the service lives of various storage units are relatively average; and the invention further provides a NVM erasing and writing control system based on the heterogeneous hybrid memory.

Description

technical field [0001] The invention relates to the technical field of computers, in particular to a method and system for controlling erasing and writing of NVM memory based on heterogeneous hybrid memory. Background technique [0002] With the development of emerging non-volatile random storage medium (Non-Volatile Memory, NVM) technology represented by resistance memory, ferroelectric memory, phase change memory, etc., the development of storage technology has been promoted, and new memory and storage systems The generation of the structure has laid a good foundation. By combining the new NVM and Dynamic Random Access Memory (DRAM), a hybrid memory architecture is built to form a heterogeneous hybrid memory. Heterogeneous hybrid memory has the characteristics of NVM and DRAM at the same time. It not only has the function of conventional memory, but the data stored in DRAM will disappear immediately after power off, which is volatile; at the same time, it can also play th...

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Problems solved by technology

[0004] NVM in heterogeneous hybrid memory is different from DRAM in characteristics. NVM has a congenital defect that the total number of erasing and writing is limited. After reaching a certain number of erasing and writing, NVM will fail, so the service life of NVM is limited. The service life is determined by the maximum erasable The number of writes is determined by the number of writes. If the maximum number of rewritable times is exceeded, the rewritable unit will become a bad block and cannot be used normally.

The conventional erasure control method is for DRAM memory. Since DRAM has no limit on the total number of erasure and write times, the conventional erasure control method is not suitable for NVM memory in heterogeneous hybrid memory.

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