A method for forming a side wall
A side wall and control gate technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as uneven thickness of side walls, and achieve the effect of avoiding damage
Active Publication Date: 2019-01-08
SEMICON MFG INT (SHANGHAI) CORP
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[0013] The purpose of this application is to provide a method for forming sidewalls to solve the problem of uneven thickness of sidewalls caused by etching methods in the prior art
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[0043] It should be pointed out that the following detailed description is exemplary and intended to provide further explanation to the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
[0044] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, it indicates There are features, steps, operations, means, components and / or combinations thereof.
[0045]For the convenience of description, spatially relative terms may be used here,...
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This application provides a method for forming side walls. The formation method includes: setting independent high-voltage device gates, selection gates and floating gates on a semiconductor substrate; setting an ONO layer on the semiconductor substrate, high-voltage device gates, selection gates and floating gates; and setting polysilicon on the ONO layer ; Etch polysilicon to form a control gate on the floating gate; set sidewall materials on the ONO layer and control gate; etch the sidewall material and use the silicon nitride layer of the ONO layer as the etching end point to obtain the sidewall material. wall; and remove the exposed silicon nitride layer. The silicon nitride layer of the ONO layer is used as the etching end point of the sidewall material to effectively control its etching end point; during the etching process, the ONO layer protects the surface of the semiconductor substrate to avoid damage; at the same time, during etching When the control gate is etched to form the control gate, the ONO layer and sidewalls wrap the remaining polysilicon, which will not cause the polysilicon to peel off and splash into other structures, resulting in device structural performance degradation.
Description
technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to a method for forming sidewalls. Background technique [0002] Among semiconductor memory devices, an Electrically Erasable Programmable Read Only Memory (EERPOM) is a type of volatile memory. The advantage of this memory is that it can be erased for the entire memory block, and the erasing speed is fast, which takes about one to two seconds. Therefore, in recent years, electrically erasable programmable read-only memory has been used in various electronic products, such as digital cameras , digital video camera, mobile phone or notebook computer, etc. [0003] In the embedded electrically erasable programmable read-only memory, it is necessary to integrate high-voltage transistors and EERPOM storage transistors together. On the premise of keeping the performance of the device as much as possible, reducing the leakage current of the device can r...
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IPC IPC(8): H01L27/11521H10B41/30
Inventor 张学海李俊
Owner SEMICON MFG INT (SHANGHAI) CORP