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Boron material and preparation method and application thereof

A technology for electromechanical and phosphorescent devices, used in chemical instruments and methods, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve the effect of increasing the molecular weight of compounds, high-efficiency electroluminescence performance, and good hole/electron balance ability

Active Publication Date: 2016-07-27
SUZHOU JOYSUN ADVANCED MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, boron-containing substances are rarely used as host materials in the field of organic electroluminescence.

Method used

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  • Boron material and preparation method and application thereof
  • Boron material and preparation method and application thereof
  • Boron material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A preparation method of boron material, the steps of the method are as follows:

[0027] Step 1: Dissolve 3.00g of 3-bromospirofluorene ring-closed triphenylamine in anhydrous tetrahydrofuran under the protection of nitrogen, cool to -78°C, and then add 3.9mL of n-butyllithium dropwise. Reaction at ℃ for 1h;

[0028] The second step: add a tetrahydrofuran solution containing 2.49 g of bis(trimethylphenyl)boron fluoride to the reaction system of the first step, react at a temperature of -78°C for 2 hours, then raise the temperature to room temperature, and react at room temperature for 12 hours;

[0029] The third step: add water to the reaction system of the second step to quench the reaction, then wash with water, then extract the organic layer with dichloromethane, then dry the organic layer with anhydrous sodium sulfate, then spin dry, and use a volume ratio of 1 :5 dichloromethane / petroleum ether passes through the column, spins dry again, recrystallizes, obtains t...

Embodiment 2

[0032] A preparation method of boron material, the steps of the method are as follows:

[0033] Step 1: Dissolve 4.00g of 4-bromospirofluorene ring-closed triphenylamine in anhydrous tetrahydrofuran under the protection of nitrogen, cool to -78°C, and then add 5.2mL of n-butyllithium dropwise. Reaction at ℃ for 1h;

[0034] The second step: add a tetrahydrofuran solution containing 3.32 g of bis(trimethylphenyl)boron fluoride to the reaction system of the first step, react at a temperature of -78°C for 2 hours, then raise the temperature to room temperature, and react at room temperature for 12 hours;

[0035] The third step: add water to the reaction system of the second step to quench the reaction, then wash with water, then extract the organic layer with dichloromethane, then dry the organic layer with anhydrous sodium sulfate, then spin dry, and use a volume ratio of 1 :5 dichloromethane / petroleum ether passes through the column, spins dry again, recrystallizes, obtains t...

Embodiment 3

[0038] A preparation method of boron material, the steps of the method are as follows:

[0039] Step 1: Dissolve 4.50g of 3-bromospirofluorene in anhydrous tetrahydrofuran under the protection of nitrogen, cool to -78°C, then add 5.7mL of n-butyllithium dropwise, and react at -78°C 1h;

[0040]The second step: add a tetrahydrofuran solution containing 3.98 g of bis(trimethylphenyl)boron fluoride to the reaction system of the first step, react at a temperature of -78°C for 2 hours, then raise the temperature to room temperature, and react at room temperature for 12 hours;

[0041] The third step: add water to the reaction system of the second step to quench the reaction, then wash with water, then extract the organic layer with dichloromethane, then dry the organic layer with anhydrous sodium sulfate, then spin dry, and use a volume ratio of 1 :5 dichloromethane / petroleum ether passes through the column, spins dry again, recrystallizes, obtains the SF-3-DMB boron material of 3...

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Abstract

The invention provides a boron material and a preparation method and application thereof.The chemical structural formula of the boron material is shown in the description, wherein A is closed-loop triphenylamine groups of different loci or spirofluorene groups of different loci.The chemical structural formula is shown in the description.According to the boron material, the conjugate degree of a main material is effectively reduced, the molecular weight of a compound is increased, through the extremely good electron withdrawing capacity of boron, the born material is connected with an electron donating group with a spiral structure, the bipolar main material with a high triplet state and good cavity / electron balance capacity can be formed, and compared with a commonly-used phosphorescence main material, the bipolar main material has different characteristics and can be widely applied to the field of organic electroluminescence.

Description

technical field [0001] The invention belongs to the technical field of boron materials, and in particular relates to a boron material and its preparation method and application. Background technique [0002] Since Professor Deng Qingyun et al. (C.W.Tang, S.A.VanSlyke, Appl. Phys. Lett. 1987, 51, 913-915.) invented the first generation of practical organic electroluminescent diodes in 1987, research on organic electroluminescence has become a hot topic, and It is considered to be a new generation of flat panel display technology with excellent development prospects. Compared with inorganic electroluminescent materials, organic electroluminescent materials have the advantages of high luminous efficiency, strong luminous brightness, low energy consumption, low driving voltage, and simple manufacture. [0003] Organic electroluminescent materials are generally classified into singlet fluorescent dyes and triplet phosphorescent dyes. However, due to the strong concentration quen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F5/02H01L51/54
CPCC07F5/027H10K85/624H10K85/6572
Inventor 廖良生蒋佐权薛苗苗
Owner SUZHOU JOYSUN ADVANCED MATERIALS CO LTD
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